Raman Spectroscopy Investigation of Laser-Irradiated Single-Walled Carbon Nanotube Films

Research output: Contribution to journalArticle

Abstract

Raman spectroscopy (RS) is the tool of choice for the analysis of carbon nanomaterials. In graphene and carbon nanotubes (CNT), RS provides rich information such as defect concentration, CNT chirality, graphene layer number, doping, strain, and other physical parameters of interest. This work presents the RS investigation of a semiconducting CNT film after high power laser irradiation. Changes were observed in the D band revealing the change in the defect concentration induced by the laser. More importantly, it was found the relative intensity decrease of G and some radial breathing modes which suggests that the effects of laser irradiation induce diameter-selective effects in CNTs. The spectroscopic changes to the selective electronic structure modification for some semiconducting CNTs were attributed as due to those CNTs getting closer to resonance conditions with the fixed laser excitation.

Original languageEnglish
Article number1800412
JournalPhysica Status Solidi (B) Basic Research
DOIs
Publication statusAccepted/In press - 1 Jan 2018

Fingerprint

Carbon Nanotubes
Single-walled carbon nanotubes (SWCN)
Raman spectroscopy
Carbon nanotubes
Graphite
carbon nanotubes
Laser beam effects
Graphene
Lasers
lasers
Defects
Laser excitation
Chirality
High power lasers
Nanostructured materials
Electronic structure
graphene
Carbon
Doping (additives)
irradiation

Keywords

  • carbon nanotubes
  • laser-irradiation
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "Raman spectroscopy (RS) is the tool of choice for the analysis of carbon nanomaterials. In graphene and carbon nanotubes (CNT), RS provides rich information such as defect concentration, CNT chirality, graphene layer number, doping, strain, and other physical parameters of interest. This work presents the RS investigation of a semiconducting CNT film after high power laser irradiation. Changes were observed in the D band revealing the change in the defect concentration induced by the laser. More importantly, it was found the relative intensity decrease of G− and some radial breathing modes which suggests that the effects of laser irradiation induce diameter-selective effects in CNTs. The spectroscopic changes to the selective electronic structure modification for some semiconducting CNTs were attributed as due to those CNTs getting closer to resonance conditions with the fixed laser excitation.",
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AB - Raman spectroscopy (RS) is the tool of choice for the analysis of carbon nanomaterials. In graphene and carbon nanotubes (CNT), RS provides rich information such as defect concentration, CNT chirality, graphene layer number, doping, strain, and other physical parameters of interest. This work presents the RS investigation of a semiconducting CNT film after high power laser irradiation. Changes were observed in the D band revealing the change in the defect concentration induced by the laser. More importantly, it was found the relative intensity decrease of G− and some radial breathing modes which suggests that the effects of laser irradiation induce diameter-selective effects in CNTs. The spectroscopic changes to the selective electronic structure modification for some semiconducting CNTs were attributed as due to those CNTs getting closer to resonance conditions with the fixed laser excitation.

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