Abstract
The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.
| Original language | English |
|---|---|
| Pages (from-to) | 636-639 |
| Number of pages | 4 |
| Journal | Semiconductors |
| Volume | 33 |
| Issue number | 6 |
| Publication status | Published - Jun 1999 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Radiation-thermal activation of silicon implanted in gallium arsenide. / Ardyshev, V. M.; Surzhikov, A. P.
In: Semiconductors, Vol. 33, No. 6, 06.1999, p. 636-639.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Radiation-thermal activation of silicon implanted in gallium arsenide
AU - Ardyshev, V. M.
AU - Surzhikov, A. P.
PY - 1999/6
Y1 - 1999/6
N2 - The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.
AB - The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033148185&partnerID=8YFLogxK
M3 - Article
VL - 33
SP - 636
EP - 639
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 6
ER -