Abstract
Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
| Original language | English |
|---|---|
| Title of host publication | Advanced Materials Research |
| Pages | 237-241 |
| Number of pages | 5 |
| Volume | 880 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013 - Tomsk, Russian Federation Duration: 23 Apr 2013 → 26 Apr 2013 |
Publication series
| Name | Advanced Materials Research |
|---|---|
| Volume | 880 |
| ISSN (Print) | 10226680 |
Other
| Other | 10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 23.4.13 → 26.4.13 |
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Keywords
- AlGainP
- Heterostructures
- Light emitting diodes
- Neutron-irradiation
ASJC Scopus subject areas
- Engineering(all)
Cite this
Radiation model of light emitting diode based on algainp heterostructures with multiple quantum wells. / Gradoboev, Alexander Vasilievich; Orlova, Ksenia Nikolaevna.
Advanced Materials Research. Vol. 880 2014. p. 237-241 (Advanced Materials Research; Vol. 880).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Radiation model of light emitting diode based on algainp heterostructures with multiple quantum wells
AU - Gradoboev, Alexander Vasilievich
AU - Orlova, Ksenia Nikolaevna
PY - 2014
Y1 - 2014
N2 - Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
AB - Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
KW - AlGainP
KW - Heterostructures
KW - Light emitting diodes
KW - Neutron-irradiation
UR - http://www.scopus.com/inward/record.url?scp=84893919285&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893919285&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.880.237
DO - 10.4028/www.scientific.net/AMR.880.237
M3 - Conference contribution
AN - SCOPUS:84893919285
SN - 9783038350040
VL - 880
T3 - Advanced Materials Research
SP - 237
EP - 241
BT - Advanced Materials Research
ER -