TY - GEN
T1 - Radiation model of light emitting diode based on algainp heterostructures with multiple quantum wells
AU - Gradoboev, Alexander Vasilievich
AU - Orlova, Ksenia Nikolaevna
PY - 2014
Y1 - 2014
N2 - Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
AB - Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
KW - AlGainP
KW - Heterostructures
KW - Light emitting diodes
KW - Neutron-irradiation
UR - http://www.scopus.com/inward/record.url?scp=84893919285&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893919285&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.880.237
DO - 10.4028/www.scientific.net/AMR.880.237
M3 - Conference contribution
AN - SCOPUS:84893919285
SN - 9783038350040
VL - 880
T3 - Advanced Materials Research
SP - 237
EP - 241
BT - Advanced Materials Research
T2 - 10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013
Y2 - 23 April 2013 through 26 April 2013
ER -