Radiation model of light emitting diode based on algainp heterostructures with multiple quantum wells

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages237-241
Number of pages5
Volume880
DOIs
Publication statusPublished - 2014
Event10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013 - Tomsk, Russian Federation
Duration: 23 Apr 201326 Apr 2013

Publication series

NameAdvanced Materials Research
Volume880
ISSN (Print)10226680

Other

Other10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013
CountryRussian Federation
CityTomsk
Period23.4.1326.4.13

Keywords

  • AlGainP
  • Heterostructures
  • Light emitting diodes
  • Neutron-irradiation

ASJC Scopus subject areas

  • Engineering(all)

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