Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics

A. V. Kabyshev, F. V. Konusov, V. V. Lopatin

Research output: Contribution to journalArticle

Abstract

The parameters of defects of radiation-induced and biographic types and of their complexes in boron nitride and Al 2O 3 mono- and polycrystals after ion and thermal modification are investigated invoking the methods of optical and thermoactivation spectroscopy. The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized. The contribution of the forbidden band width and of the material structure to changes in the properties of defect clusters with continuous spectra of energy levels and of separate radiation-induced point-type defects with local energy levels is evaluated. The stability of defects with various energy spectra under thermal, field, and photoexcitation and also after heat treatment in air is evaluated. The most probable nature of vacancy and impurity-vacancy defects and of vacancy complexes is understood.

Original languageEnglish
Pages (from-to)241-249
Number of pages9
JournalRussian Physics Journal
Volume43
Issue number3
Publication statusPublished - 2000

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defects
radiation
ions
energy levels
forbidden bands
electron transitions
continuous spectra
polycrystals
boron nitrides
photoexcitation
energy spectra
heat treatment
bandwidth
optical properties
impurities
air
single crystals
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics. / Kabyshev, A. V.; Konusov, F. V.; Lopatin, V. V.

In: Russian Physics Journal, Vol. 43, No. 3, 2000, p. 241-249.

Research output: Contribution to journalArticle

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