Using the methods of optical absorption and photoconductivity, the parameters of localized states of radiation-induced defect complexes in ion-irradiated and annealed aluminum nitride have been ascertained. Contributions of defect clusters with a continuous spectra of energetic levels as well as radiation vacancy and impurity-vacancy defects with local energetic levels in the material properties change were determined. Nature of radiation point defects clusters and impurity-vacancy complexes is established.
|Number of pages||8|
|Journal||Fizika i Khimiya Obrabotki Materialov|
|Publication status||Published - 2004|
ASJC Scopus subject areas
- Materials Science(all)