Abstract
Using the methods of optical absorption and photoconductivity, the parameters of localized states of radiation-induced defect complexes in ion-irradiated and annealed aluminum nitride have been ascertained. Contributions of defect clusters with a continuous spectra of energetic levels as well as radiation vacancy and impurity-vacancy defects with local energetic levels in the material properties change were determined. Nature of radiation point defects clusters and impurity-vacancy complexes is established.
| Original language | English |
|---|---|
| Pages (from-to) | 5-12 |
| Number of pages | 8 |
| Journal | Fizika i Khimiya Obrabotki Materialov |
| Issue number | 1 |
| Publication status | Published - 2004 |
ASJC Scopus subject areas
- Materials Science(all)