Quantum Effects Under Migratory Polarization in Nanometer Layers of Proton Semiconductors and Dielectrics at Ultralow Temperatures

Yu. M. Annenkov, V. A. Kalytka, M. V. Korovkin

Division for Oil and Gas Engineering

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	35-41
Journal	Russian Physics Journal
Volume	58
Issue number	1
DOIs	https://doi.org/10.1007/s11182-015-0459-z
Publication status	Published - May 2015

Keywords

crystals with hydrogen bonds
migration polarization
proton relaxation
the nonequilibrium density matrix for protons
quantum Boltzmann statistics for the ensemble of non-interacting protons
spectra of the complex permittivity
abnormal effects in the migration polarization

Cite this

Annenkov, Y. M., Kalytka, V. A., & Korovkin, M. V. (2015). Quantum Effects Under Migratory Polarization in Nanometer Layers of Proton Semiconductors and Dielectrics at Ultralow Temperatures. Russian Physics Journal, 58(1), 35-41. https://doi.org/10.1007/s11182-015-0459-z

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keywords = "crystals with hydrogen bonds, migration polarization, proton relaxation, the nonequilibrium density matrix for protons, quantum Boltzmann statistics for the ensemble of non-interacting protons, spectra of the complex permittivity, abnormal effects in the migration polarization",

author = "Annenkov, {Yu. M.} and Kalytka, {V. A.} and Korovkin, {M. V.}",

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AU - Korovkin, M. V.

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KW - crystals with hydrogen bonds

KW - migration polarization

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KW - the nonequilibrium density matrix for protons

KW - quantum Boltzmann statistics for the ensemble of non-interacting protons

KW - spectra of the complex permittivity

KW - abnormal effects in the migration polarization

U2 - 10.1007/s11182-015-0459-z

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Access to Document

10.1007/s11182-015-0459-z