Quantum Effects Under Migratory Polarization in Nanometer Layers of Proton Semiconductors and Dielectrics at Ultralow Temperatures

Yu. M. Annenkov, V. A. Kalytka, M. V. Korovkin

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)35-41
JournalRussian Physics Journal
Volume58
Issue number1
DOIs
Publication statusPublished - May 2015

Keywords

  • crystals with hydrogen bonds
  • migration polarization
  • proton relaxation
  • the nonequilibrium density matrix for protons
  • quantum Boltzmann statistics for the ensemble of non-interacting protons
  • spectra of the complex permittivity
  • abnormal effects in the migration polarization

Cite this

Quantum Effects Under Migratory Polarization in Nanometer Layers of Proton Semiconductors and Dielectrics at Ultralow Temperatures. / Annenkov, Yu. M.; Kalytka, V. A.; Korovkin, M. V.

In: Russian Physics Journal, Vol. 58, No. 1, 05.2015, p. 35-41.

Research output: Contribution to journalArticle

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author = "Annenkov, {Yu. M.} and Kalytka, {V. A.} and Korovkin, {M. V.}",
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KW - spectra of the complex permittivity

KW - abnormal effects in the migration polarization

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