TY - JOUR
T1 - Pulsed ion beam formation of highly doped GaAs layers
AU - Bayazitov, Rustem M.
AU - Antonova, Landish Kh
AU - Khaibullin, Ildus B.
AU - Remnev, Gennadii E.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.
AB - The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.
KW - Carrier concentration
KW - GaAs
KW - Implantation
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U2 - 10.1016/S0168-583X(98)00030-5
DO - 10.1016/S0168-583X(98)00030-5
M3 - Article
AN - SCOPUS:0032044714
VL - 139
SP - 418
EP - 421
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -