Pulsed ion beam formation of highly doped GaAs layers

Abstract

The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n⁺-GaAs layers (n = 10¹⁹-10²⁰ cm^-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.

Original language	English
Pages (from-to)	418-421
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	139
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00030-5
Publication status	Published - 1 Jan 1998

Keywords

Carrier concentration
GaAs
Implantation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(98)00030-5

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title = "Pulsed ion beam formation of highly doped GaAs layers",

abstract = "The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.",

keywords = "Carrier concentration, GaAs, Implantation",

author = "Bayazitov, {Rustem M.} and Antonova, {Landish Kh} and Khaibullin, {Ildus B.} and Remnev, {Gennadii E.}",

year = "1998",

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doi = "10.1016/S0168-583X(98)00030-5",

language = "English",

volume = "139",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

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T1 - Pulsed ion beam formation of highly doped GaAs layers

AU - Bayazitov, Rustem M.

AU - Antonova, Landish Kh

AU - Khaibullin, Ildus B.

AU - Remnev, Gennadii E.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.

AB - The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.

KW - Carrier concentration

KW - GaAs

KW - Implantation

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DO - 10.1016/S0168-583X(98)00030-5

M3 - Article

AN - SCOPUS:0032044714

VL - 139

SP - 418

EP - 421

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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