Abstract
The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 418-421 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 139 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1 Jan 1998 |
Keywords
- Carrier concentration
- GaAs
- Implantation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Bayazitov, R. M., Antonova, L. K., Khaibullin, I. B., & Remnev, G. E. (1998). Pulsed ion beam formation of highly doped GaAs layers. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 139(1-4), 418-421. https://doi.org/10.1016/S0168-583X(98)00030-5