Pulsed ion beam formation of highly doped GaAs layers

Rustem M. Bayazitov, Landish Kh Antonova, Ildus B. Khaibullin, Gennadii E. Remnev

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.

Original languageEnglish
Pages (from-to)418-421
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume139
Issue number1-4
DOIs
Publication statusPublished - 1 Jan 1998

Fingerprint

Auger electron spectroscopy
Ion implantation
Ion beams
Thermodynamic stability
Chemical activation
ion beams
Impurities
Atoms
Computer simulation
electrical measurement
Auger spectroscopy
electron spectroscopy
ion implantation
thermal stability
computerized simulation
activation
impurities
atoms
simulation

Keywords

  • Carrier concentration
  • GaAs
  • Implantation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Pulsed ion beam formation of highly doped GaAs layers. / Bayazitov, Rustem M.; Antonova, Landish Kh; Khaibullin, Ildus B.; Remnev, Gennadii E.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 139, No. 1-4, 01.01.1998, p. 418-421.

Research output: Contribution to journalArticle

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