Properties of oxide and nitride ceramics after ion-heat modification

Abstract

The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.

Original language	English
Pages (from-to)	92-97
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	166
DOIs	https://doi.org/10.1016/S0168-583X(99)01217-3
Publication status	Published - 2 May 2000

ASJC Scopus subject areas

Surfaces, Coatings and Films
Instrumentation
Surfaces and Interfaces

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10.1016/S0168-583X(99)01217-3

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Kabyshev, A. V., Konusov, F. V., Kurakov, A. G., & Lopatin, V. V. (2000). Properties of oxide and nitride ceramics after ion-heat modification. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 166, 92-97. https://doi.org/10.1016/S0168-583X(99)01217-3

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abstract = "The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.",

author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Kurakov, {A. G.} and Lopatin, {V. V.}",

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T1 - Properties of oxide and nitride ceramics after ion-heat modification

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Kurakov, A. G.

AU - Lopatin, V. V.

PY - 2000/5/2

Y1 - 2000/5/2

N2 - The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.

AB - The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.

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