Abstract
The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.
| Original language | English |
|---|---|
| Pages (from-to) | 92-97 |
| Number of pages | 6 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 166 |
| DOIs | |
| Publication status | Published - 2 May 2000 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Properties of oxide and nitride ceramics after ion-heat modification. / Kabyshev, A. V.; Konusov, F. V.; Kurakov, A. G.; Lopatin, V. V.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 166, 02.05.2000, p. 92-97.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Properties of oxide and nitride ceramics after ion-heat modification
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Kurakov, A. G.
AU - Lopatin, V. V.
PY - 2000/5/2
Y1 - 2000/5/2
N2 - The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.
AB - The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.
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UR - http://www.scopus.com/inward/citedby.url?scp=0033737185&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(99)01217-3
DO - 10.1016/S0168-583X(99)01217-3
M3 - Article
VL - 166
SP - 92
EP - 97
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -