Properties of oxide and nitride ceramics after ion-heat modification

A. V. Kabyshev, F. V. Konusov, A. G. Kurakov, V. V. Lopatin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminum oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.

Original languageEnglish
Pages (from-to)92-97
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume166
DOIs
Publication statusPublished - 2 May 2000

Fingerprint

Nitrides
Oxides
nitrides
ceramics
Ions
heat
Defects
oxides
defects
ions
Charge transfer
Energy gap
Aluminum Oxide
Ion bombardment
Fermi level
ion irradiation
Conduction bands
Light absorption
conduction bands
optical absorption

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Properties of oxide and nitride ceramics after ion-heat modification. / Kabyshev, A. V.; Konusov, F. V.; Kurakov, A. G.; Lopatin, V. V.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 166, 02.05.2000, p. 92-97.

Research output: Contribution to journalArticle

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