Abstract
In this article, we report on the optical properties of bismuth ions doped epoxy novolak resin (ENR). The polymer layers containing 1-20 at. of bismuth were fabricated by spin coating onto silicon or quartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Absorption spectra were taken in the range from 350 to 800 nm. Optical band gap Eg was determined from the absorption coefficient values using Taucs procedure, i.e., from the relationship ahv 1/4 A(hv - Eg)2 and the obtained values varied from 2.94 to 3.23 eV depending on the amount of bismuth ions involved in the samples. Photoluminescence spectra around 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm (Ex 1/4. 500 mW). Optical properties of bismuth-doped ENR were evaluated on the bases of the concentration of the bismuth ions involved in the samples and showed, e.g., close relations between concentration of the dopants and intensity of the luminescence band at 1300 nm. IR spectra showed only negligible changes in the original substrate resin. Our results proved that the bismuth-doped ENR have a potential for utilization in photonic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1608-1612 |
| Number of pages | 5 |
| Journal | Journal of Applied Polymer Science |
| Volume | 117 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Aug 2010 |
| Externally published | Yes |
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Keywords
- Bismuth
- Epoxy novolak resin
- Optical materials and properties
- Polymers
ASJC Scopus subject areas
- Chemistry(all)
- Surfaces, Coatings and Films
- Polymers and Plastics
- Materials Chemistry
Cite this
Properties of Epoxy Novolak Resin Layers Doped with Bismuth for Photoluminescence Near 1300 nm. / Prajzler, Václav; Lyutakov, Oleksiy; Hüttel, Ivan; Špirková, Jarmila; Oswald, Jiří; Machovič, Vladimír; Jeřábek, Vítězslav.
In: Journal of Applied Polymer Science, Vol. 117, No. 3, 01.08.2010, p. 1608-1612.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Properties of Epoxy Novolak Resin Layers Doped with Bismuth for Photoluminescence Near 1300 nm
AU - Prajzler, Václav
AU - Lyutakov, Oleksiy
AU - Hüttel, Ivan
AU - Špirková, Jarmila
AU - Oswald, Jiří
AU - Machovič, Vladimír
AU - Jeřábek, Vítězslav
PY - 2010/8/1
Y1 - 2010/8/1
N2 - In this article, we report on the optical properties of bismuth ions doped epoxy novolak resin (ENR). The polymer layers containing 1-20 at. of bismuth were fabricated by spin coating onto silicon or quartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Absorption spectra were taken in the range from 350 to 800 nm. Optical band gap Eg was determined from the absorption coefficient values using Taucs procedure, i.e., from the relationship ahv 1/4 A(hv - Eg)2 and the obtained values varied from 2.94 to 3.23 eV depending on the amount of bismuth ions involved in the samples. Photoluminescence spectra around 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm (Ex 1/4. 500 mW). Optical properties of bismuth-doped ENR were evaluated on the bases of the concentration of the bismuth ions involved in the samples and showed, e.g., close relations between concentration of the dopants and intensity of the luminescence band at 1300 nm. IR spectra showed only negligible changes in the original substrate resin. Our results proved that the bismuth-doped ENR have a potential for utilization in photonic devices.
AB - In this article, we report on the optical properties of bismuth ions doped epoxy novolak resin (ENR). The polymer layers containing 1-20 at. of bismuth were fabricated by spin coating onto silicon or quartz substrates. The properties of the material were studied using several methods with special regards to its potential utilization in photonics devices. Absorption spectra were taken in the range from 350 to 800 nm. Optical band gap Eg was determined from the absorption coefficient values using Taucs procedure, i.e., from the relationship ahv 1/4 A(hv - Eg)2 and the obtained values varied from 2.94 to 3.23 eV depending on the amount of bismuth ions involved in the samples. Photoluminescence spectra around 1300 nm were recorded by using excitation of semiconductor lasers operating at 808 nm (Ex 1/4. 500 mW). Optical properties of bismuth-doped ENR were evaluated on the bases of the concentration of the bismuth ions involved in the samples and showed, e.g., close relations between concentration of the dopants and intensity of the luminescence band at 1300 nm. IR spectra showed only negligible changes in the original substrate resin. Our results proved that the bismuth-doped ENR have a potential for utilization in photonic devices.
KW - Bismuth
KW - Epoxy novolak resin
KW - Optical materials and properties
KW - Polymers
UR - http://www.scopus.com/inward/record.url?scp=77952054354&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952054354&partnerID=8YFLogxK
U2 - 10.1002/app.32039
DO - 10.1002/app.32039
M3 - Article
VL - 117
SP - 1608
EP - 1612
JO - Journal of Applied Polymer Science
JF - Journal of Applied Polymer Science
SN - 0021-8995
IS - 3
ER -