Production of silicon neutron transmutation doping in a research reactor (Tomsk complex)

Abstract

A complex for silicon neutron transmutation doping is described. The complex is based on a 6 MW research reactor. A container with silicon ingots of the length of 750 mm and diameter of 130 mm is irradiated in a reactor horizontal channel. The irradiation uniformity is achieved by rotation and simultaneous container motion along the channel in the process of irradiation. The maximal flux density of thermal neutrons is 1.1·10¹³ cm^-2·s^-1. The thermal neutron fluence is measured by the KtV-4 fission chambers. The complex productivity is 4500 kg/year when doping silicon ingots with the nominal electric resistance of 60 Ohm·cm.

Original language	English
Pages (from-to)	38-40
Number of pages	3
Journal	Atomnaya Energiya
Volume	79
Issue number	1
Publication status	Published - Jul 1995

ASJC Scopus subject areas

Nuclear Energy and Engineering

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@article{bfe2dea16ac94ef0944276f4ba5db6f3,

title = "Production of silicon neutron transmutation doping in a research reactor (Tomsk complex)",

abstract = "A complex for silicon neutron transmutation doping is described. The complex is based on a 6 MW research reactor. A container with silicon ingots of the length of 750 mm and diameter of 130 mm is irradiated in a reactor horizontal channel. The irradiation uniformity is achieved by rotation and simultaneous container motion along the channel in the process of irradiation. The maximal flux density of thermal neutrons is 1.1·1013 cm-2·s-1. The thermal neutron fluence is measured by the KtV-4 fission chambers. The complex productivity is 4500 kg/year when doping silicon ingots with the nominal electric resistance of 60 Ohm·cm.",

author = "Varlachev, {V. A.} and Kuzin, {A. N.} and Lykhin, {S. V.} and Solodovnikov, {E. S.} and Yury Petrovich Usov and Fotin, {A. V.} and Tsibul'nikov, {Yu A.}",

year = "1995",

month = jul,

language = "English",

volume = "79",

pages = "38--40",

journal = "Atomnaya Energiya",

issn = "0004-7163",

publisher = "Redaktsiya Zhurnala Atomnaya Energiya",

number = "1",

}

TY - JOUR

T1 - Production of silicon neutron transmutation doping in a research reactor (Tomsk complex)

AU - Varlachev, V. A.

AU - Kuzin, A. N.

AU - Lykhin, S. V.

AU - Solodovnikov, E. S.

AU - Usov, Yury Petrovich

AU - Fotin, A. V.

AU - Tsibul'nikov, Yu A.

PY - 1995/7

Y1 - 1995/7

N2 - A complex for silicon neutron transmutation doping is described. The complex is based on a 6 MW research reactor. A container with silicon ingots of the length of 750 mm and diameter of 130 mm is irradiated in a reactor horizontal channel. The irradiation uniformity is achieved by rotation and simultaneous container motion along the channel in the process of irradiation. The maximal flux density of thermal neutrons is 1.1·1013 cm-2·s-1. The thermal neutron fluence is measured by the KtV-4 fission chambers. The complex productivity is 4500 kg/year when doping silicon ingots with the nominal electric resistance of 60 Ohm·cm.

AB - A complex for silicon neutron transmutation doping is described. The complex is based on a 6 MW research reactor. A container with silicon ingots of the length of 750 mm and diameter of 130 mm is irradiated in a reactor horizontal channel. The irradiation uniformity is achieved by rotation and simultaneous container motion along the channel in the process of irradiation. The maximal flux density of thermal neutrons is 1.1·1013 cm-2·s-1. The thermal neutron fluence is measured by the KtV-4 fission chambers. The complex productivity is 4500 kg/year when doping silicon ingots with the nominal electric resistance of 60 Ohm·cm.

UR - http://www.scopus.com/inward/record.url?scp=0029329673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029329673&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029329673

VL - 79

SP - 38

EP - 40

JO - Atomnaya Energiya

JF - Atomnaya Energiya

SN - 0004-7163

IS - 1

ER -