Abstract
A complex for silicon neutron transmutation doping is described. The complex is based on a 6 MW research reactor. A container with silicon ingots of the length of 750 mm and diameter of 130 mm is irradiated in a reactor horizontal channel. The irradiation uniformity is achieved by rotation and simultaneous container motion along the channel in the process of irradiation. The maximal flux density of thermal neutrons is 1.1·1013 cm-2·s-1. The thermal neutron fluence is measured by the KtV-4 fission chambers. The complex productivity is 4500 kg/year when doping silicon ingots with the nominal electric resistance of 60 Ohm·cm.
| Original language | English |
|---|---|
| Pages (from-to) | 38-40 |
| Number of pages | 3 |
| Journal | Atomnaya Energiya |
| Volume | 79 |
| Issue number | 1 |
| Publication status | Published - Jul 1995 |
ASJC Scopus subject areas
- Nuclear Energy and Engineering
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Varlachev, V. A., Kuzin, A. N., Lykhin, S. V., Solodovnikov, E. S., Usov, YP., Fotin, A. V., & Tsibul'nikov, Y. A. (1995). Production of silicon neutron transmutation doping in a research reactor (Tomsk complex). Atomnaya Energiya, 79(1), 38-40.