Process stabilization during reactive high power impulse magnetron sputtering of Ce/Gd target

S. V. Rabotkin, V. O. Oskirko, I. V. Ionov, V. A. Semenov, A. V. Shipilova, A. A. Solovyev

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)


    In this study, a simple approach to stabilize reactive high power impulse magnetron sputtering process in the transition zone between the metallic and oxide modes was investigated. The method is based on the use of peak current value as feedback and control signal. It was shown that the change in the state of the target surface causes almost instantaneous change in the amplitude and shape of the current pulses. To stabilize the deposition process, the pulse frequency was regulated to maintain a constant maximum discharge current. The hysteresis behavior and the variations of the pulse current waveforms over a wide range of O 2 flow rates and pulse frequencies during a reactive HiPIMS deposition of gadolinia-doped ceria (GDC) thin films in an Ar-O 2 atmosphere were examined. Stable process conditions were maintained at the O 2 flow from 0.9 to 3.9 sccm by adjustment of the pulse frequency from 1.45 to 2.9 kHz. GDC films deposited using peak current regulation exhibited a stable stoichiometry and high deposition rate in comparison with films obtained without process stabilization.

    Original languageEnglish
    Article number032078
    JournalJournal of Physics: Conference Series
    Issue number3
    Publication statusPublished - 27 Nov 2018
    Event6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018 - Tomsk, Russian Federation
    Duration: 16 Sep 201822 Sep 2018

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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