Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping

N. A. Antropov, E. Yu Boyarko, E. K. Gorbunov, K. V. Grigorjev, Yu Yu Kryuchkov, O. G. Chernikov, I. P. Chernov

Research output: Contribution to journalArticlepeer-review

Abstract

The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.

Original languageEnglish
Pages (from-to)1496-1498
Number of pages3
JournalBulletin of the Russian Academy of Sciences: Physics
Volume73
Issue number11
DOIs
Publication statusPublished - Nov 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping'. Together they form a unique fingerprint.

Cite this