The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon-20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.
|Number of pages||3|
|Journal||Bulletin of the Russian Academy of Sciences: Physics|
|Publication status||Published - Nov 2009|
ASJC Scopus subject areas
- Physics and Astronomy(all)