Abstract
A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.
Original language | English |
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Title of host publication | EPJ Web of Conferences |
Publisher | EDP Sciences |
Volume | 76 |
DOIs | |
Publication status | Published - 2014 |
Event | Conference on Thermo-Physical Basis of Energy Technologies - Tomsk, Russian Federation Duration: 16 Oct 2014 → 18 Oct 2014 |
Other
Other | Conference on Thermo-Physical Basis of Energy Technologies |
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Country | Russian Federation |
City | Tomsk |
Period | 16.10.14 → 18.10.14 |
ASJC Scopus subject areas
- Physics and Astronomy(all)