Prediction of power semiconductors devices reliability working in cyclic mode

Abstract

A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.

Original language	English
Title of host publication	EPJ Web of Conferences
Publisher	EDP Sciences
Volume	76
DOIs	https://doi.org/10.1051/epjconf/20147601014
Publication status	Published - 2014
Event	Conference on Thermo-Physical Basis of Energy Technologies - Tomsk, Russian Federation Duration: 16 Oct 2014 → 18 Oct 2014

Other

Other	Conference on Thermo-Physical Basis of Energy Technologies
Country	Russian Federation
City	Tomsk
Period	16.10.14 → 18.10.14

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1051/epjconf/20147601014

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Kravchenko, E. V., & Kuznetsov, G. V. (2014). Prediction of power semiconductors devices reliability working in cyclic mode. In EPJ Web of Conferences (Vol. 76). [01014] EDP Sciences. https://doi.org/10.1051/epjconf/20147601014

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abstract = "A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.",

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AB - A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.

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