Prediction of power semiconductors devices reliability working in cyclic mode

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.

Original languageEnglish
Title of host publicationEPJ Web of Conferences
PublisherEDP Sciences
Volume76
DOIs
Publication statusPublished - 2014
EventConference on Thermo-Physical Basis of Energy Technologies - Tomsk, Russian Federation
Duration: 16 Oct 201418 Oct 2014

Other

OtherConference on Thermo-Physical Basis of Energy Technologies
CountryRussian Federation
CityTomsk
Period16.10.1418.10.14

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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