Abstract
A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.
| Original language | English |
|---|---|
| Title of host publication | EPJ Web of Conferences |
| Publisher | EDP Sciences |
| Volume | 76 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | Conference on Thermo-Physical Basis of Energy Technologies - Tomsk, Russian Federation Duration: 16 Oct 2014 → 18 Oct 2014 |
Other
| Other | Conference on Thermo-Physical Basis of Energy Technologies |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 16.10.14 → 18.10.14 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Prediction of power semiconductors devices reliability working in cyclic mode. / Kravchenko, Evgeniy Vladimirovich; Kuznetsov, G. V.
EPJ Web of Conferences. Vol. 76 EDP Sciences, 2014. 01014.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Prediction of power semiconductors devices reliability working in cyclic mode
AU - Kravchenko, Evgeniy Vladimirovich
AU - Kuznetsov, G. V.
PY - 2014
Y1 - 2014
N2 - A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.
AB - A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.
UR - http://www.scopus.com/inward/record.url?scp=84906875585&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906875585&partnerID=8YFLogxK
U2 - 10.1051/epjconf/20147601014
DO - 10.1051/epjconf/20147601014
M3 - Conference contribution
AN - SCOPUS:84906875585
VL - 76
BT - EPJ Web of Conferences
PB - EDP Sciences
ER -