Abstract
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
| Original language | English |
|---|---|
| Pages (from-to) | 205-210 |
| Number of pages | 6 |
| Journal | Russian Microelectronics |
| Volume | 46 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 May 2017 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
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Erofeev, E. V., Fedin, I. V., & Yurjev, Y. N. (2017). Power switching transistors based on gallium nitride epitaxial heterostructures. Russian Microelectronics, 46(3), 205-210. https://doi.org/10.1134/S1063739717020020