Power switching transistors based on gallium nitride epitaxial heterostructures

E. V. Erofeev, I. V. Fedin, Y. N. Yurjev

The Weinberg Research Center

Research output: Contribution to journal › Article

Abstract

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage V_th = +1.2 V and a maximum drain-source current I_ds = 0.15 A/mm at the drain-source voltage V_ds = +8 V. The drain-source breakdown voltage in the closed state is V_b = 300 V at the drain-source distance L_ds = 8.5 μm and drain-source voltage V_ds = 0 V.

Original language	English
Pages (from-to)	205-210
Number of pages	6
Journal	Russian Microelectronics
Volume	46
Issue number	3
DOIs	https://doi.org/10.1134/S1063739717020020
Publication status	Published - 1 May 2017

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

Erofeev, E. V., Fedin, I. V., & Yurjev, Y. N. (2017). Power switching transistors based on gallium nitride epitaxial heterostructures. Russian Microelectronics, 46(3), 205-210. https://doi.org/10.1134/S1063739717020020

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Access to Document

10.1134/S1063739717020020