Abstract
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
| Original language | English |
|---|---|
| Pages (from-to) | 205-210 |
| Number of pages | 6 |
| Journal | Russian Microelectronics |
| Volume | 46 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 May 2017 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Power switching transistors based on gallium nitride epitaxial heterostructures. / Erofeev, E. V.; Fedin, I. V.; Yurjev, Y. N.
In: Russian Microelectronics, Vol. 46, No. 3, 01.05.2017, p. 205-210.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Power switching transistors based on gallium nitride epitaxial heterostructures
AU - Erofeev, E. V.
AU - Fedin, I. V.
AU - Yurjev, Y. N.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
AB - The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
UR - http://www.scopus.com/inward/record.url?scp=85020032109&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020032109&partnerID=8YFLogxK
U2 - 10.1134/S1063739717020020
DO - 10.1134/S1063739717020020
M3 - Article
AN - SCOPUS:85020032109
VL - 46
SP - 205
EP - 210
JO - Russian Microelectronics
JF - Russian Microelectronics
SN - 1063-7397
IS - 3
ER -