Power switching transistors based on gallium nitride epitaxial heterostructures

E. V. Erofeev, I. V. Fedin, Y. N. Yurjev

Research output: Contribution to journalArticle

Abstract

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.

Original languageEnglish
Pages (from-to)205-210
Number of pages6
JournalRussian Microelectronics
Volume46
Issue number3
DOIs
Publication statusPublished - 1 May 2017

Fingerprint

Gallium nitride
gallium nitrides
Heterojunctions
Transistors
transistors
Electric potential
Electric breakdown
Threshold voltage
electric potential
electrical faults
threshold voltage
gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Power switching transistors based on gallium nitride epitaxial heterostructures. / Erofeev, E. V.; Fedin, I. V.; Yurjev, Y. N.

In: Russian Microelectronics, Vol. 46, No. 3, 01.05.2017, p. 205-210.

Research output: Contribution to journalArticle

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