Power switching transistors based on gallium nitride epitaxial heterostructures

Abstract

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage V_th = +1.2 V and a maximum drain-source current I_ds = 0.15 A/mm at the drain-source voltage V_ds = +8 V. The drain-source breakdown voltage in the closed state is V_b = 300 V at the drain-source distance L_ds = 8.5 μm and drain-source voltage V_ds = 0 V.

Original language	English
Pages (from-to)	205-210
Number of pages	6
Journal	Russian Microelectronics
Volume	46
Issue number	3
DOIs	https://doi.org/10.1134/S1063739717020020
Publication status	Published - 1 May 2017

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1134/S1063739717020020

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title = "Power switching transistors based on gallium nitride epitaxial heterostructures",

abstract = "The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.",

author = "Erofeev, {E. V.} and Fedin, {I. V.} and Yurjev, {Y. N.}",

year = "2017",

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language = "English",

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pages = "205--210",

journal = "Russian Microelectronics",

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AU - Erofeev, E. V.

AU - Fedin, I. V.

AU - Yurjev, Y. N.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.

AB - The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.

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