Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering

Research output: Contribution to conferencePaper

Abstract

The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

Original languageEnglish
Pages1116-1121
Number of pages6
Publication statusPublished - 1 Dec 1997
EventProceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) - Baltimore, MD, USA
Duration: 29 Jun 19972 Jul 1997

Other

OtherProceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2)
CityBaltimore, MD, USA
Period29.6.972.7.97

Fingerprint

Rutherford backscattering spectroscopy
Ion beams
Diodes
Spectroscopy
X rays
Ions
Fluxes
Charge coupled devices
Ion implantation
Industrial applications
Particle accelerators
Magnets
Surface treatment
Crystals
Electric potential
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ryzhkov, V. A. (1997). Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. 1116-1121. Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .

Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. / Ryzhkov, Vladislav A.

1997. 1116-1121 Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .

Research output: Contribution to conferencePaper

Ryzhkov, VA 1997, 'Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering' Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, 29.6.97 - 2.7.97, pp. 1116-1121.
Ryzhkov VA. Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. 1997. Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .
Ryzhkov, Vladislav A. / Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .6 p.
@conference{23488cde004d4988860109c2ebc358a9,
title = "Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering",
abstract = "The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.",
author = "Ryzhkov, {Vladislav A.}",
year = "1997",
month = "12",
day = "1",
language = "English",
pages = "1116--1121",
note = "Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) ; Conference date: 29-06-1997 Through 02-07-1997",

}

TY - CONF

T1 - Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering

AU - Ryzhkov, Vladislav A.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

AB - The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

UR - http://www.scopus.com/inward/record.url?scp=0031370314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031370314&partnerID=8YFLogxK

M3 - Paper

SP - 1116

EP - 1121

ER -