Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering

Abstract

The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cⁿ⁺ and Alⁿ⁺ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 10¹² cm^-2), ion beam surface treatment ('TEMP-1', Cⁿ⁺ and H⁺, U = 300 kV, τ = 50 ns, Φ = 10¹³ cm^-2) and film deposition ('TEMP-2', Cⁿ⁺ and H⁺, U = 450 kV, τ = 100 ns, Φ = 10¹⁴ cm^-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

Original language	English
Pages	1116-1121
Number of pages	6
Publication status	Published - 1 Dec 1997
Event	Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) - Baltimore, MD, USA Duration: 29 Jun 1997 → 2 Jul 1997

Other

Other	Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2)
City	Baltimore, MD, USA
Period	29.6.97 → 2.7.97

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Ryzhkov, V. A. (1997). Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. 1116-1121. Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .

Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering. / Ryzhkov, Vladislav A.

1997. 1116-1121 Paper presented at Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2), Baltimore, MD, USA, .

Research output: Contribution to conference › Paper

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title = "Possibilities of the instant intense pulsed ion beams' diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering",

abstract = "The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.",

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year = "1997",

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N2 - The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

AB - The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (`MUK-M'accelerator with Cn+ and Aln+ ion species, voltage U = 100 kV, pulse duration τ = 100 ns, flux per shot Φ = 1012 cm-2), ion beam surface treatment ('TEMP-1', Cn+ and H+, U = 300 kV, τ = 50 ns, Φ = 1013 cm-2) and film deposition ('TEMP-2', Cn+ and H+, U = 450 kV, τ = 100 ns, Φ = 1014 cm-2) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible. Allowing for an IPIB processor is the failure-prone device, it is difficult to overestimate this possibility for industrial applications.

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