Abstract
Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval ΔT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval ΔT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval ΔT = 180–360°C, the primary centers of positron trapping are low-angle boundaries.
| Original language | English |
|---|---|
| Pages (from-to) | 219-228 |
| Number of pages | 10 |
| Journal | Physics of the Solid State |
| Volume | 57 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2015 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing. / Kuznetsov, P. V.; Mironov, Yu P.; Tolmachev, A. I.; Bordulev, Yu S.; Laptev, R. S.; Lider, A. M.; Korznikov, A. V.
In: Physics of the Solid State, Vol. 57, No. 2, 2015, p. 219-228.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing
AU - Kuznetsov, P. V.
AU - Mironov, Yu P.
AU - Tolmachev, A. I.
AU - Bordulev, Yu S.
AU - Laptev, R. S.
AU - Lider, A. M.
AU - Korznikov, A. V.
PY - 2015
Y1 - 2015
N2 - Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval ΔT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval ΔT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval ΔT = 180–360°C, the primary centers of positron trapping are low-angle boundaries.
AB - Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval ΔT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval ΔT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval ΔT = 180–360°C, the primary centers of positron trapping are low-angle boundaries.
UR - http://www.scopus.com/inward/record.url?scp=84923057105&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84923057105&partnerID=8YFLogxK
U2 - 10.1134/S1063783415020225
DO - 10.1134/S1063783415020225
M3 - Article
AN - SCOPUS:84923057105
VL - 57
SP - 219
EP - 228
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 2
ER -