Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing

P. V. Kuznetsov, Yu P. Mironov, A. I. Tolmachev, Yu S. Bordulev, R. S. Laptev, A. M. Lider, A. V. Korznikov

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Using the method of measuring the positron lifetime spectra and Doppler broadening annihilation line spectroscopy, the annealing of defects in submicrocrystalline nickel produced by equal channel angular pressing has been studied. In as-prepared samples, the positrons are trapped by dislocation defects and vacancy complexes inside crystallites. The size of vacancy complexes decreases with increasing annealing temperature in the interval ΔT = 20–300°C. However, at T = 360°C, the complexes start growing again. The dependence of S-parameter on W-parameter derived from the Doppler broadening spectroscopy has two parts with different inclinations to axes that correspond to different types of primary centers of positron trapping in submicrocrystalline nickel. It has been elucidated that, at recovery stage in the temperature interval ΔT = 20–180°C, the main centers of positron trapping are low-angle boundaries enriched by impurities, while at in situ recrystallization stage in the temperature interval ΔT = 180–360°C, the primary centers of positron trapping are low-angle boundaries.

Original languageEnglish
Pages (from-to)219-228
Number of pages10
JournalPhysics of the Solid State
Volume57
Issue number2
DOIs
Publication statusPublished - 2015

Fingerprint

Positrons
Nickel
positrons
nickel
Spectroscopy
Annealing
Defects
annealing
defects
spectroscopy
Doppler effect
trapping
intervals
Vacancies
Temperature
Equal channel angular pressing
Scattering parameters
pressing
Dislocations (crystals)
Crystallites

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Positron spectroscopy of defects in submicrocrystalline nickel after low-temperature annealing. / Kuznetsov, P. V.; Mironov, Yu P.; Tolmachev, A. I.; Bordulev, Yu S.; Laptev, R. S.; Lider, A. M.; Korznikov, A. V.

In: Physics of the Solid State, Vol. 57, No. 2, 2015, p. 219-228.

Research output: Contribution to journalArticle

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AU - Tolmachev, A. I.

AU - Bordulev, Yu S.

AU - Laptev, R. S.

AU - Lider, A. M.

AU - Korznikov, A. V.

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