POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

A. D. Pogrebnyak, V. A. Kuzminikh, K. P. Arefev

Division for Mathematics and Computer Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

Original language	English
Pages (from-to)	145-151
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	71
Issue number	1
Publication status	Published - May 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Fingerprint Dive into the research topics of 'POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.'. Together they form a unique fingerprint.

Cite this

@article{ae2bce2a09b841d0aefde125c3be9cde,

title = "POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.",

abstract = "The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.",

author = "Pogrebnyak, {A. D.} and Kuzminikh, {V. A.} and Arefev, {K. P.}",

year = "1982",

month = may,

language = "English",

volume = "71",

pages = "145--151",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

AU - Pogrebnyak, A. D.

AU - Kuzminikh, V. A.

AU - Arefev, K. P.

PY - 1982/5

Y1 - 1982/5

N2 - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

AB - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

UR - http://www.scopus.com/inward/record.url?scp=0020136820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020136820&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020136820

VL - 71

SP - 145

EP - 151

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -