POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

A. D. Pogrebnyak, V. A. Kuzminikh, K. P. Arefev

Division for Mathematics and Computer Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

Original language	English
Pages (from-to)	145-151
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	71
Issue number	1
Publication status	Published - May 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.",

abstract = "The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.",

author = "Pogrebnyak, {A. D.} and Kuzminikh, {V. A.} and Arefev, {K. P.}",

year = "1982",

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publisher = "Wiley-VCH Verlag",

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AU - Arefev, K. P.

PY - 1982/5

Y1 - 1982/5

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AB - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

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POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

Abstract

ASJC Scopus subject areas

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