POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

A. D. Pogrebnyak, V. A. Kuzminikh, K. P. Arefev

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

Original languageEnglish
Pages (from-to)145-151
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume71
Issue number1
Publication statusPublished - May 1982

Fingerprint

Positron annihilation
Angular distribution
Positrons
positron annihilation
Metal foil
foils
positrons
emitters
angular distribution
Photons
Spectroscopy
Semiconductor materials
photons
profiles
spectroscopy
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. / Pogrebnyak, A. D.; Kuzminikh, V. A.; Arefev, K. P.

In: Physica Status Solidi (A) Applied Research, Vol. 71, No. 1, 05.1982, p. 145-151.

Research output: Contribution to journal › Article

Pogrebnyak, AD, Kuzminikh, VA & Arefev, KP 1982, 'POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.', Physica Status Solidi (A) Applied Research, vol. 71, no. 1, pp. 145-151.
Pogrebnyak AD, Kuzminikh VA, Arefev KP. POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. Physica Status Solidi (A) Applied Research. 1982 May;71(1):145-151.
Pogrebnyak, A. D. ; Kuzminikh, V. A. ; Arefev, K. P. / POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. In: Physica Status Solidi (A) Applied Research. 1982 ; Vol. 71, No. 1. pp. 145-151.
@article{ae2bce2a09b841d0aefde125c3be9cde,
title = "POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.",
abstract = "The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.",
author = "Pogrebnyak, {A. D.} and Kuzminikh, {V. A.} and Arefev, {K. P.}",
year = "1982",
month = "5",
language = "English",
volume = "71",
pages = "145--151",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

AU - Pogrebnyak, A. D.

AU - Kuzminikh, V. A.

AU - Arefev, K. P.

PY - 1982/5

Y1 - 1982/5

N2 - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

AB - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

UR - http://www.scopus.com/inward/record.url?scp=0020136820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020136820&partnerID=8YFLogxK

M3 - Article

VL - 71

SP - 145

EP - 151

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -

Access to Document