Abstract
The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.
| Original language | English |
|---|---|
| Pages (from-to) | 145-151 |
| Number of pages | 7 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 71 |
| Issue number | 1 |
| Publication status | Published - May 1982 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Pogrebnyak, A. D., Kuzminikh, V. A., & Arefev, K. P. (1982). POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. Physica Status Solidi (A) Applied Research, 71(1), 145-151.