POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.

A. D. Pogrebnyak, V. A. Kuzminikh, K. P. Arefev

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.

Original languageEnglish
Pages (from-to)145-151
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume71
Issue number1
Publication statusPublished - May 1982

Fingerprint

Positron annihilation
Angular distribution
Positrons
positron annihilation
Metal foil
foils
positrons
emitters
angular distribution
Photons
Spectroscopy
Semiconductor materials
photons
profiles
spectroscopy
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. / Pogrebnyak, A. D.; Kuzminikh, V. A.; Arefev, K. P.

In: Physica Status Solidi (A) Applied Research, Vol. 71, No. 1, 05.1982, p. 145-151.

Research output: Contribution to journalArticle

Pogrebnyak, A. D. ; Kuzminikh, V. A. ; Arefev, K. P. / POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. In: Physica Status Solidi (A) Applied Research. 1982 ; Vol. 71, No. 1. pp. 145-151.
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