Abstract
The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.
Original language | English |
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Pages (from-to) | 145-151 |
Number of pages | 7 |
Journal | Physica Status Solidi (A) Applied Research |
Volume | 71 |
Issue number | 1 |
Publication status | Published - May 1982 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics