Abstract
The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.
| Original language | English |
|---|---|
| Pages (from-to) | 145-151 |
| Number of pages | 7 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 71 |
| Issue number | 1 |
| Publication status | Published - May 1982 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS. / Pogrebnyak, A. D.; Kuzminikh, V. A.; Arefev, K. P.
In: Physica Status Solidi (A) Applied Research, Vol. 71, No. 1, 05.1982, p. 145-151.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - POSITRON PROFILES AND POSITRON ANNIHILATION IN THIN LAYERS.
AU - Pogrebnyak, A. D.
AU - Kuzminikh, V. A.
AU - Arefev, K. P.
PY - 1982/5
Y1 - 1982/5
N2 - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.
AB - The anniilation photon angular distribution (APAD) for double-layer samples is measured. The minimum foil thickness of materials of various effective atomic numbers on the semiconductor GaAs support is determined. Their structure can be studied by the positron-spectroscopy method with the **2**2Na( beta ** plus , gamma ) emitter.
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UR - http://www.scopus.com/inward/citedby.url?scp=0020136820&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0020136820
VL - 71
SP - 145
EP - 151
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -