Abstract
The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.
| Original language | English |
|---|---|
| Title of host publication | Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 |
| Subtitle of host publication | Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 |
| Publisher | American Institute of Physics Inc. |
| Volume | 1783 |
| ISBN (Electronic) | 9780735414457 |
| DOIs | |
| Publication status | Published - 10 Nov 2016 |
| Event | International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 - Tomsk, Russian Federation Duration: 19 Sep 2016 → 23 Sep 2016 |
Conference
| Conference | International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 19.9.16 → 23.9.16 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. / Kuznetsov, Pavel V.; Lider, Andrey M.; Bordulev, Yuriy S.; Laptev, Roman S.; Mironov, Yuriy P.; Rakhmatulina, Tanzilya V.; Korznikov, Alexandr V.
Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783 American Institute of Physics Inc., 2016. 020126.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing
AU - Kuznetsov, Pavel V.
AU - Lider, Andrey M.
AU - Bordulev, Yuriy S.
AU - Laptev, Roman S.
AU - Mironov, Yuriy P.
AU - Rakhmatulina, Tanzilya V.
AU - Korznikov, Alexandr V.
PY - 2016/11/10
Y1 - 2016/11/10
N2 - The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.
AB - The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.
UR - http://www.scopus.com/inward/record.url?scp=85006052144&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006052144&partnerID=8YFLogxK
U2 - 10.1063/1.4966419
DO - 10.1063/1.4966419
M3 - Conference contribution
VL - 1783
BT - Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
PB - American Institute of Physics Inc.
ER -