Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing

Pavel V. Kuznetsov, Andrey M. Lider, Yuriy S. Bordulev, Roman S. Laptev, Yuriy P. Mironov, Tanzilya V. Rakhmatulina, Alexandr V. Korznikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.

Original languageEnglish
Title of host publicationAdvanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
Subtitle of host publicationProceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
PublisherAmerican Institute of Physics Inc.
Volume1783
ISBN (Electronic)9780735414457
DOIs
Publication statusPublished - 10 Nov 2016
EventInternational Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 - Tomsk, Russian Federation
Duration: 19 Sep 201623 Sep 2016

Conference

ConferenceInternational Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
CountryRussian Federation
CityTomsk
Period19.9.1623.9.16

Fingerprint

positron annihilation
positrons
copper
annealing
defects
spectroscopy
pressing
temperature
trapping
traps

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kuznetsov, P. V., Lider, A. M., Bordulev, Y. S., Laptev, R. S., Mironov, Y. P., Rakhmatulina, T. V., & Korznikov, A. V. (2016). Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. In Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 (Vol. 1783). [020126] American Institute of Physics Inc.. https://doi.org/10.1063/1.4966419

Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. / Kuznetsov, Pavel V.; Lider, Andrey M.; Bordulev, Yuriy S.; Laptev, Roman S.; Mironov, Yuriy P.; Rakhmatulina, Tanzilya V.; Korznikov, Alexandr V.

Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783 American Institute of Physics Inc., 2016. 020126.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuznetsov, PV, Lider, AM, Bordulev, YS, Laptev, RS, Mironov, YP, Rakhmatulina, TV & Korznikov, AV 2016, Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. in Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. vol. 1783, 020126, American Institute of Physics Inc., International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016, Tomsk, Russian Federation, 19.9.16. https://doi.org/10.1063/1.4966419
Kuznetsov PV, Lider AM, Bordulev YS, Laptev RS, Mironov YP, Rakhmatulina TV et al. Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. In Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783. American Institute of Physics Inc. 2016. 020126 https://doi.org/10.1063/1.4966419
Kuznetsov, Pavel V. ; Lider, Andrey M. ; Bordulev, Yuriy S. ; Laptev, Roman S. ; Mironov, Yuriy P. ; Rakhmatulina, Tanzilya V. ; Korznikov, Alexandr V. / Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783 American Institute of Physics Inc., 2016.
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AU - Laptev, Roman S.

AU - Mironov, Yuriy P.

AU - Rakhmatulina, Tanzilya V.

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AB - The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.

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