Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing

Abstract

The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10^-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.

Original language	English
Title of host publication	Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
Subtitle of host publication	Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
Publisher	American Institute of Physics Inc.
Volume	1783
ISBN (Electronic)	9780735414457
DOIs	https://doi.org/10.1063/1.4966419
Publication status	Published - 10 Nov 2016
Event	International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 - Tomsk, Russian Federation Duration: 19 Sep 2016 → 23 Sep 2016

Conference

Conference	International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016
Country	Russian Federation
City	Tomsk
Period	19.9.16 → 23.9.16

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4966419

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Kuznetsov, P. V., Lider, A. M., Bordulev, Y. S., Laptev, R. S., Mironov, Y. P., Rakhmatulina, T. V., & Korznikov, A. V. (2016). Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. In Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 (Vol. 1783). [020126] American Institute of Physics Inc.. https://doi.org/10.1063/1.4966419

Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. / Kuznetsov, Pavel V.; Lider, Andrey M.; Bordulev, Yuriy S.; Laptev, Roman S.; Mironov, Yuriy P.; Rakhmatulina, Tanzilya V.; Korznikov, Alexandr V.

Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783 American Institute of Physics Inc., 2016. 020126.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuznetsov, PV , Lider, AM , Bordulev, YS , Laptev, RS, Mironov, YP, Rakhmatulina, TV & Korznikov, AV 2016, Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. in Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. vol. 1783, 020126, American Institute of Physics Inc., International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016, Tomsk, Russian Federation, 19.9.16. https://doi.org/10.1063/1.4966419

Kuznetsov PV , Lider AM , Bordulev YS , Laptev RS, Mironov YP, Rakhmatulina TV et al. Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. In Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783. American Institute of Physics Inc. 2016. 020126 https://doi.org/10.1063/1.4966419

Kuznetsov, Pavel V. ; Lider, Andrey M. ; Bordulev, Yuriy S. ; Laptev, Roman S. ; Mironov, Yuriy P. ; Rakhmatulina, Tanzilya V. ; Korznikov, Alexandr V. / Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing. Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016: Proceedings of the International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016. Vol. 1783 American Institute of Physics Inc., 2016.

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abstract = "The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.",

author = "Kuznetsov, {Pavel V.} and Lider, {Andrey M.} and Bordulev, {Yuriy S.} and Laptev, {Roman S.} and Mironov, {Yuriy P.} and Rakhmatulina, {Tanzilya V.} and Korznikov, {Alexandr V.}",

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AU - Kuznetsov, Pavel V.

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AU - Mironov, Yuriy P.

AU - Rakhmatulina, Tanzilya V.

AU - Korznikov, Alexandr V.

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N2 - The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.

AB - The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10-4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20-300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300-670°C are dislocation-type defects.

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