Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing

Pavel V. Kuznetsov, Yuri P. Mironov, Aleksey I. Tolmachev, Tanzilya V. Rakhmatulina, Yuri S. Bordulev, Roman S. Laptev, Andrey M. Lider, Andrey A. Mikhailov, Alexander V. Korznikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
PublisherAmerican Institute of Physics Inc.
Pages327-330
Number of pages4
Volume1623
ISBN (Print)9780735412606
DOIs
Publication statusPublished - 2014
EventInternational Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation
Duration: 3 Sep 20145 Sep 2014

Other

OtherInternational Conference on Physical Mesomechanics of Multilevel Systems 2014
CountryRussian Federation
CityTomsk
Period3.9.145.9.14

Fingerprint

positron annihilation
hierarchies
positrons
traps
nickel
annealing
defects
pressing
spectroscopy
impurities
diffraction
x rays
temperature

Keywords

  • Annealing
  • Dislocations
  • Grain boundary
  • Low-angle boundary
  • Positron annihilation
  • Subgrain
  • Submicrocrystalline structure
  • Vacancy cluster

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kuznetsov, P. V., Mironov, Y. P., Tolmachev, A. I., Rakhmatulina, T. V., Bordulev, Y. S., Laptev, R. S., ... Korznikov, A. V. (2014). Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. In AIP Conference Proceedings (Vol. 1623, pp. 327-330). American Institute of Physics Inc.. https://doi.org/10.1063/1.4901488

Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. / Kuznetsov, Pavel V.; Mironov, Yuri P.; Tolmachev, Aleksey I.; Rakhmatulina, Tanzilya V.; Bordulev, Yuri S.; Laptev, Roman S.; Lider, Andrey M.; Mikhailov, Andrey A.; Korznikov, Alexander V.

AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. p. 327-330.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuznetsov, PV, Mironov, YP, Tolmachev, AI, Rakhmatulina, TV, Bordulev, YS, Laptev, RS, Lider, AM, Mikhailov, AA & Korznikov, AV 2014, Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. in AIP Conference Proceedings. vol. 1623, American Institute of Physics Inc., pp. 327-330, International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russian Federation, 3.9.14. https://doi.org/10.1063/1.4901488
Kuznetsov PV, Mironov YP, Tolmachev AI, Rakhmatulina TV, Bordulev YS, Laptev RS et al. Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. In AIP Conference Proceedings. Vol. 1623. American Institute of Physics Inc. 2014. p. 327-330 https://doi.org/10.1063/1.4901488
Kuznetsov, Pavel V. ; Mironov, Yuri P. ; Tolmachev, Aleksey I. ; Rakhmatulina, Tanzilya V. ; Bordulev, Yuri S. ; Laptev, Roman S. ; Lider, Andrey M. ; Mikhailov, Andrey A. ; Korznikov, Alexander V. / Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. pp. 327-330
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AU - Rakhmatulina, Tanzilya V.

AU - Bordulev, Yuri S.

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AU - Mikhailov, Andrey A.

AU - Korznikov, Alexander V.

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AB - Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

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