Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing

Pavel V. Kuznetsov, Yuri P. Mironov, Aleksey I. Tolmachev, Tanzilya V. Rakhmatulina, Yuri S. Bordulev, Roman S. Laptev, Andrey M. Lider, Andrey A. Mikhailov, Alexander V. Korznikov

Division for Experimental Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

Original language	English
Title of host publication	AIP Conference Proceedings
Publisher	American Institute of Physics Inc.
Pages	327-330
Number of pages	4
Volume	1623
ISBN (Print)	9780735412606
DOIs	https://doi.org/10.1063/1.4901488
Publication status	Published - 2014
Event	International Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation Duration: 3 Sep 2014 → 5 Sep 2014

Other

Other	International Conference on Physical Mesomechanics of Multilevel Systems 2014
Country	Russian Federation
City	Tomsk
Period	3.9.14 → 5.9.14

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Keywords

Annealing
Dislocations
Grain boundary
Low-angle boundary
Positron annihilation
Subgrain
Submicrocrystalline structure
Vacancy cluster

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Kuznetsov, P. V., Mironov, Y. P., Tolmachev, A. I., Rakhmatulina, T. V., Bordulev, Y. S., Laptev, R. S., Lider, A. M., Mikhailov, A. A., & Korznikov, A. V. (2014). Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. In AIP Conference Proceedings (Vol. 1623, pp. 327-330). American Institute of Physics Inc.. https://doi.org/10.1063/1.4901488

Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. / Kuznetsov, Pavel V.; Mironov, Yuri P.; Tolmachev, Aleksey I.; Rakhmatulina, Tanzilya V.; Bordulev, Yuri S.; Laptev, Roman S.; Lider, Andrey M.; Mikhailov, Andrey A.; Korznikov, Alexander V.

AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. p. 327-330.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuznetsov, PV, Mironov, YP, Tolmachev, AI, Rakhmatulina, TV, Bordulev, YS , Laptev, RS , Lider, AM, Mikhailov, AA & Korznikov, AV 2014, Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. in AIP Conference Proceedings. vol. 1623, American Institute of Physics Inc., pp. 327-330, International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russian Federation, 3.9.14. https://doi.org/10.1063/1.4901488

Kuznetsov, Pavel V. ; Mironov, Yuri P. ; Tolmachev, Aleksey I. ; Rakhmatulina, Tanzilya V. ; Bordulev, Yuri S. ; Laptev, Roman S. ; Lider, Andrey M. ; Mikhailov, Andrey A. ; Korznikov, Alexander V. / Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. pp. 327-330

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abstract = "Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.",

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AU - Rakhmatulina, Tanzilya V.

AU - Bordulev, Yuri S.

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AU - Mikhailov, Andrey A.

AU - Korznikov, Alexander V.

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AB - Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

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Access to Document

10.1063/1.4901488