Abstract
Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Publisher | American Institute of Physics Inc. |
| Pages | 327-330 |
| Number of pages | 4 |
| Volume | 1623 |
| ISBN (Print) | 9780735412606 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | International Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation Duration: 3 Sep 2014 → 5 Sep 2014 |
Other
| Other | International Conference on Physical Mesomechanics of Multilevel Systems 2014 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 3.9.14 → 5.9.14 |
Fingerprint
Keywords
- Annealing
- Dislocations
- Grain boundary
- Low-angle boundary
- Positron annihilation
- Subgrain
- Submicrocrystalline structure
- Vacancy cluster
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. / Kuznetsov, Pavel V.; Mironov, Yuri P.; Tolmachev, Aleksey I.; Rakhmatulina, Tanzilya V.; Bordulev, Yuri S.; Laptev, Roman S.; Lider, Andrey M.; Mikhailov, Andrey A.; Korznikov, Alexander V.
AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. p. 327-330.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing
AU - Kuznetsov, Pavel V.
AU - Mironov, Yuri P.
AU - Tolmachev, Aleksey I.
AU - Rakhmatulina, Tanzilya V.
AU - Bordulev, Yuri S.
AU - Laptev, Roman S.
AU - Lider, Andrey M.
AU - Mikhailov, Andrey A.
AU - Korznikov, Alexander V.
PY - 2014
Y1 - 2014
N2 - Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.
AB - Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.
KW - Annealing
KW - Dislocations
KW - Grain boundary
KW - Low-angle boundary
KW - Positron annihilation
KW - Subgrain
KW - Submicrocrystalline structure
KW - Vacancy cluster
UR - http://www.scopus.com/inward/record.url?scp=84915820139&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84915820139&partnerID=8YFLogxK
U2 - 10.1063/1.4901488
DO - 10.1063/1.4901488
M3 - Conference contribution
AN - SCOPUS:84915820139
SN - 9780735412606
VL - 1623
SP - 327
EP - 330
BT - AIP Conference Proceedings
PB - American Institute of Physics Inc.
ER -