Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing

Abstract

Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

Original language	English
Title of host publication	AIP Conference Proceedings
Publisher	American Institute of Physics Inc.
Pages	327-330
Number of pages	4
Volume	1623
ISBN (Print)	9780735412606
DOIs	https://doi.org/10.1063/1.4901488
Publication status	Published - 2014
Event	International Conference on Physical Mesomechanics of Multilevel Systems 2014 - Tomsk, Russian Federation Duration: 3 Sep 2014 → 5 Sep 2014

Other

Other	International Conference on Physical Mesomechanics of Multilevel Systems 2014
Country	Russian Federation
City	Tomsk
Period	3.9.14 → 5.9.14

Keywords

Annealing
Dislocations
Grain boundary
Low-angle boundary
Positron annihilation
Subgrain
Submicrocrystalline structure
Vacancy cluster

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4901488

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Kuznetsov, P. V., Mironov, Y. P., Tolmachev, A. I., Rakhmatulina, T. V., Bordulev, Y. S., Laptev, R. S., Lider, A. M., Mikhailov, A. A., & Korznikov, A. V. (2014). Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. In AIP Conference Proceedings (Vol. 1623, pp. 327-330). American Institute of Physics Inc.. https://doi.org/10.1063/1.4901488

Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. / Kuznetsov, Pavel V.; Mironov, Yuri P.; Tolmachev, Aleksey I.; Rakhmatulina, Tanzilya V.; Bordulev, Yuri S.; Laptev, Roman S.; Lider, Andrey M.; Mikhailov, Andrey A.; Korznikov, Alexander V.

AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. p. 327-330.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuznetsov, PV, Mironov, YP, Tolmachev, AI, Rakhmatulina, TV, Bordulev, YS , Laptev, RS , Lider, AM, Mikhailov, AA & Korznikov, AV 2014, Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. in AIP Conference Proceedings. vol. 1623, American Institute of Physics Inc., pp. 327-330, International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russian Federation, 3.9.14. https://doi.org/10.1063/1.4901488

Kuznetsov, Pavel V. ; Mironov, Yuri P. ; Tolmachev, Aleksey I. ; Rakhmatulina, Tanzilya V. ; Bordulev, Yuri S. ; Laptev, Roman S. ; Lider, Andrey M. ; Mikhailov, Andrey A. ; Korznikov, Alexander V. / Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing. AIP Conference Proceedings. Vol. 1623 American Institute of Physics Inc., 2014. pp. 327-330

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abstract = "Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.",

keywords = "Annealing, Dislocations, Grain boundary, Low-angle boundary, Positron annihilation, Subgrain, Submicrocrystalline structure, Vacancy cluster",

author = "Kuznetsov, {Pavel V.} and Mironov, {Yuri P.} and Tolmachev, {Aleksey I.} and Rakhmatulina, {Tanzilya V.} and Bordulev, {Yuri S.} and Laptev, {Roman S.} and Lider, {Andrey M.} and Mikhailov, {Andrey A.} and Korznikov, {Alexander V.}",

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AU - Kuznetsov, Pavel V.

AU - Mironov, Yuri P.

AU - Tolmachev, Aleksey I.

AU - Rakhmatulina, Tanzilya V.

AU - Bordulev, Yuri S.

AU - Laptev, Roman S.

AU - Lider, Andrey M.

AU - Mikhailov, Andrey A.

AU - Korznikov, Alexander V.

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N2 - Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

AB - Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocationtype defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

KW - Annealing

KW - Dislocations

KW - Grain boundary

KW - Low-angle boundary

KW - Positron annihilation

KW - Subgrain

KW - Submicrocrystalline structure

KW - Vacancy cluster

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