Abstract
The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 273-276 |
| Number of pages | 4 |
| Journal | Applied Physics |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Nov 1975 |
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Keywords
- Positron annihilation
- Positronium states
- Silicon crystals
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
- Atomic and Molecular Physics, and Optics
Cite this
Arefiev, K. P., Karetnikov, A. S., & Vorobiev, S. A. (1975). Positron annihilation in silicon crystals with mechanically processed surfaces. Applied Physics, 8(3), 273-276. https://doi.org/10.1007/BF00896622