Abstract
The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.
Original language | English |
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Pages (from-to) | 273-276 |
Number of pages | 4 |
Journal | Applied Physics |
Volume | 8 |
Issue number | 3 |
DOIs | |
Publication status | Published - Nov 1975 |
Keywords
- Positron annihilation
- Positronium states
- Silicon crystals
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
- Atomic and Molecular Physics, and Optics