Positron annihilation in silicon crystals with mechanically processed surfaces

Abstract

The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Applied Physics
Volume	8
Issue number	3
DOIs	https://doi.org/10.1007/BF00896622
Publication status	Published - Nov 1975

Keywords

Positron annihilation
Positronium states
Silicon crystals

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)
Atomic and Molecular Physics, and Optics

Access to Document

10.1007/BF00896622

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title = "Positron annihilation in silicon crystals with mechanically processed surfaces",

abstract = "The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.",

keywords = "Positron annihilation, Positronium states, Silicon crystals",

author = "Arefiev, {K. P.} and Karetnikov, {A. S.} and Vorobiev, {S. A.}",

year = "1975",

month = nov,

doi = "10.1007/BF00896622",

language = "English",

volume = "8",

pages = "273--276",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Federal Informational-Analytical Center of the Defense Industry",

number = "3",

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T1 - Positron annihilation in silicon crystals with mechanically processed surfaces

AU - Arefiev, K. P.

AU - Karetnikov, A. S.

AU - Vorobiev, S. A.

PY - 1975/11

Y1 - 1975/11

N2 - The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.

AB - The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.

KW - Positron annihilation

KW - Positronium states

KW - Silicon crystals

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DO - 10.1007/BF00896622

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EP - 276

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