Positron annihilation in silicon crystals with mechanically processed surfaces

K. P. Arefiev, A. S. Karetnikov, S. A. Vorobiev

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalApplied Physics
Volume8
Issue number3
DOIs
Publication statusPublished - Nov 1975

Keywords

  • Positron annihilation
  • Positronium states
  • Silicon crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

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