Positron annihilation in Si and GaAs crystals with an applied magnetic field

K. P. Arefiev, A. S. Karetnikov, A. A. Tsoi, S. A. Vorobiev

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The narrow components in angular correlation curves of positron annihilation in Si and GaAs were observed. Hence it follows the formation of positronium-like states in semiconductors. Effects of mechanical and radiation treatment of the samples of Ps-states are discussed.

Original languageEnglish
Pages (from-to)219-220
Number of pages2
JournalPhysics Letters A
Issue number3
Publication statusPublished - 29 Nov 1976


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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