Positron annihilation in Si and GaAs crystals with an applied magnetic field

K. P. Arefiev, A. S. Karetnikov, A. A. Tsoi, S. A. Vorobiev

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The narrow components in angular correlation curves of positron annihilation in Si and GaAs were observed. Hence it follows the formation of positronium-like states in semiconductors. Effects of mechanical and radiation treatment of the samples of Ps-states are discussed.

Original languageEnglish
Pages (from-to)219-220
Number of pages2
JournalPhysics Letters A
Volume59
Issue number3
DOIs
Publication statusPublished - 29 Nov 1976

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positronium
positron annihilation
angular correlation
curves
radiation
magnetic fields
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Positron annihilation in Si and GaAs crystals with an applied magnetic field. / Arefiev, K. P.; Karetnikov, A. S.; Tsoi, A. A.; Vorobiev, S. A.

In: Physics Letters A, Vol. 59, No. 3, 29.11.1976, p. 219-220.

Research output: Contribution to journalArticle

Arefiev, K. P. ; Karetnikov, A. S. ; Tsoi, A. A. ; Vorobiev, S. A. / Positron annihilation in Si and GaAs crystals with an applied magnetic field. In: Physics Letters A. 1976 ; Vol. 59, No. 3. pp. 219-220.
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AU - Vorobiev, S. A.

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