Positron annihilation in Si and GaAs crystals with an applied magnetic field

K. P. Arefiev, A. S. Karetnikov, A. A. Tsoi, S. A. Vorobiev

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The narrow components in angular correlation curves of positron annihilation in Si and GaAs were observed. Hence it follows the formation of positronium-like states in semiconductors. Effects of mechanical and radiation treatment of the samples of Ps-states are discussed.

Original languageEnglish
Pages (from-to)219-220
Number of pages2
JournalPhysics Letters A
Volume59
Issue number3
DOIs
Publication statusPublished - 29 Nov 1976

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this