Positron annihilation in hydrogen charged crystalline titanium

K. P. Arefev, O. V. Boev, O. N. Imas, A. S. Surkov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Positron annihilation measurements of the hydrogen charged α-titanium. crystals are reported. Changes in the lifetime spectra and the Doppler Broadened Annihilation Line (DBAL) parameters of pure titanium and hydrogen charged samples (about TiH0.01) were investigated. Along with operating experiments the electron structure, the first positron lifetime component of the α-Ti and TiH0.125 and the probability distribution of positron into low-level cell volume were calculated via the linear muffin-tin orbital method in the atomic sphere approximation. Theoretical calculation shows that a satisfactory agreement with the experimental data is achieved. On the basis of experimental data and theoretical calculations it was shown that different hydrogen atom states demonstrate their influence in the lifetime spectra and the Doppler Broadened Annihilation Line in different ways.

Original languageEnglish
Title of host publicationProceedings - 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages296-299
Number of pages4
ISBN (Print)0780374274, 9780780374270
DOIs
Publication statusPublished - 2002
Event6th Russian-Korean International Symposium on Science and Technology, KORUS 2002 - Novosibirsk, Russian Federation
Duration: 24 Jun 200230 Jun 2002

Other

Other6th Russian-Korean International Symposium on Science and Technology, KORUS 2002
CountryRussian Federation
CityNovosibirsk
Period24.6.0230.6.02

Fingerprint

Positron annihilation
Titanium
Hydrogen
Positrons
Electrons
Crystalline materials
Tin
Probability distributions
Cell Size
Atoms
Crystals
Experiments

Keywords

  • Doppler broadened annihilation line
  • electron structure
  • linear muffin-tin orbital method
  • positron annihilation
  • positron lifetime

ASJC Scopus subject areas

  • Civil and Structural Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Mechanics of Materials
  • Architecture
  • Electronic, Optical and Magnetic Materials
  • Medicine (miscellaneous)

Cite this

Arefev, K. P., Boev, O. V., Imas, O. N., & Surkov, A. S. (2002). Positron annihilation in hydrogen charged crystalline titanium. In Proceedings - 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002 (pp. 296-299). [1028023] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/KORUS.2002.1028023

Positron annihilation in hydrogen charged crystalline titanium. / Arefev, K. P.; Boev, O. V.; Imas, O. N.; Surkov, A. S.

Proceedings - 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 296-299 1028023.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arefev, KP, Boev, OV, Imas, ON & Surkov, AS 2002, Positron annihilation in hydrogen charged crystalline titanium. in Proceedings - 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002., 1028023, Institute of Electrical and Electronics Engineers Inc., pp. 296-299, 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002, Novosibirsk, Russian Federation, 24.6.02. https://doi.org/10.1109/KORUS.2002.1028023
Arefev KP, Boev OV, Imas ON, Surkov AS. Positron annihilation in hydrogen charged crystalline titanium. In Proceedings - 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 296-299. 1028023 https://doi.org/10.1109/KORUS.2002.1028023
Arefev, K. P. ; Boev, O. V. ; Imas, O. N. ; Surkov, A. S. / Positron annihilation in hydrogen charged crystalline titanium. Proceedings - 6th Russian-Korean International Symposium on Science and Technology, KORUS 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 296-299
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