Abstract
A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.
| Original language | English |
|---|---|
| Title of host publication | Sov Phys Solid State |
| Pages | 1369-1371 |
| Number of pages | 3 |
| Volume | 19 |
| Edition | 8 |
| Publication status | Published - Aug 1977 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON. / Aref'ev, K. P.; Vorob'ev, S. A.; Prokop'ev, E. P.; Tsoi, A. A.
Sov Phys Solid State. Vol. 19 8. ed. 1977. p. 1369-1371.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON.
AU - Aref'ev, K. P.
AU - Vorob'ev, S. A.
AU - Prokop'ev, E. P.
AU - Tsoi, A. A.
PY - 1977/8
Y1 - 1977/8
N2 - A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.
AB - A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.
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UR - http://www.scopus.com/inward/citedby.url?scp=0017522934&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0017522934
VL - 19
SP - 1369
EP - 1371
BT - Sov Phys Solid State
ER -