POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON.

Abstract

A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.

Original language	English
Title of host publication	Sov Phys Solid State
Pages	1369-1371
Number of pages	3
Volume	19
Edition	8
Publication status	Published - Aug 1977

ASJC Scopus subject areas

Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON.'. Together they form a unique fingerprint.

Cite this

Aref'ev, K. P., Vorob'ev, S. A., Prokop'ev, E. P., & Tsoi, A. A. (1977). POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON. In Sov Phys Solid State (8 ed., Vol. 19, pp. 1369-1371)

@inbook{c705c6a1b3bd4c8a996af47c01ec2f7e,

title = "POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON.",

abstract = "A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.",

author = "Aref'ev, {K. P.} and Vorob'ev, {S. A.} and Prokop'ev, {E. P.} and Tsoi, {A. A.}",

year = "1977",

month = aug,

language = "English",

volume = "19",

pages = "1369--1371",

booktitle = "Sov Phys Solid State",

edition = "8",

}

TY - CHAP

T1 - POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON.

AU - Aref'ev, K. P.

AU - Vorob'ev, S. A.

AU - Prokop'ev, E. P.

AU - Tsoi, A. A.

PY - 1977/8

Y1 - 1977/8

N2 - A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.

AB - A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.

UR - http://www.scopus.com/inward/record.url?scp=0017522934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017522934&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0017522934

VL - 19

SP - 1369

EP - 1371

BT - Sov Phys Solid State

ER -