Abstract
A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.
Original language | English |
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Title of host publication | Sov Phys Solid State |
Pages | 1369-1371 |
Number of pages | 3 |
Volume | 19 |
Edition | 8 |
Publication status | Published - Aug 1977 |
ASJC Scopus subject areas
- Engineering(all)