Abstract
A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.
| Original language | English |
|---|---|
| Title of host publication | Sov Phys Solid State |
| Pages | 1369-1371 |
| Number of pages | 3 |
| Volume | 19 |
| Edition | 8 |
| Publication status | Published - Aug 1977 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
Aref'ev, K. P., Vorob'ev, S. A., Prokop'ev, E. P., & Tsoi, A. A. (1977). POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON. In Sov Phys Solid State (8 ed., Vol. 19, pp. 1369-1371)