POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON.

K. P. Aref'ev, S. A. Vorob'ev, E. P. Prokop'ev, A. A. Tsoi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A narrow component in the correlation curves of the annihilation radiation of positrons in silicon crystals was observed when a static magnetic field up to 12 kG was applied. Irradiation of the silicon with 2. 0 MeV electrons increased the strength of the narrow component. The effect was strongest when the samples were cooled to 80 degree K. A model of a positronium atom as an impurity atom with a deep level in the semiconductor energy gap is considered. It is proposed that positronium atoms in irradiated silicon are most probably localized in A vacancy centers, and this produces an anomalously strong ″magnetic quenching″ of their ortho-states.

Original languageEnglish
Title of host publicationSov Phys Solid State
Pages1369-1371
Number of pages3
Volume19
Edition8
Publication statusPublished - Aug 1977

ASJC Scopus subject areas

  • Engineering(all)

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    Aref'ev, K. P., Vorob'ev, S. A., Prokop'ev, E. P., & Tsoi, A. A. (1977). POSITRON ANNIHILATION IN ELECTRON-IRRADIATED SILICON. In Sov Phys Solid State (8 ed., Vol. 19, pp. 1369-1371)