Abstract
Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 217-225 |
| Number of pages | 9 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 81 |
| Issue number | 1 |
| Publication status | Published - Jan 1984 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS. / Pogrebnyak, A. D.; Boyarko, E. Yu; Kryuchkov, Yu Yu; Vorobev, S. A.
In: Physica Status Solidi (A) Applied Research, Vol. 81, No. 1, 01.1984, p. 217-225.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS.
AU - Pogrebnyak, A. D.
AU - Boyarko, E. Yu
AU - Kryuchkov, Yu Yu
AU - Vorobev, S. A.
PY - 1984/1
Y1 - 1984/1
N2 - Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.
AB - Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.
UR - http://www.scopus.com/inward/record.url?scp=0021230627&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0021230627&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0021230627
VL - 81
SP - 217
EP - 225
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -