POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS.

A. D. Pogrebnyak, E. Yu Boyarko, Yu Yu Kryuchkov, S. A. Vorobev

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.

Original languageEnglish
Pages (from-to)217-225
Number of pages9
JournalPhysica Status Solidi (A) Applied Research
Volume81
Issue number1
Publication statusPublished - Jan 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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