Abstract
Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 217-225 |
| Number of pages | 9 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 81 |
| Issue number | 1 |
| Publication status | Published - Jan 1984 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Pogrebnyak, A. D., Boyarko, E. Y., Kryuchkov, Y. Y., & Vorobev, S. A. (1984). POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS. Physica Status Solidi (A) Applied Research, 81(1), 217-225.