POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS.

A. D. Pogrebnyak, E. Yu Boyarko, Yu Yu Kryuchkov, S. A. Vorobev

Division for Experimental Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.

Original language	English
Pages (from-to)	217-225
Number of pages	9
Journal	Physica Status Solidi (A) Applied Research
Volume	81
Issue number	1
Publication status	Published - Jan 1984

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{cfe8a943b7d749b3991460cb172e5a1a,

title = "POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS.",

abstract = "Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.",

author = "Pogrebnyak, {A. D.} and Boyarko, {E. Yu} and Kryuchkov, {Yu Yu} and Vorobev, {S. A.}",

year = "1984",

month = jan,

language = "English",

volume = "81",

pages = "217--225",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS.

AU - Pogrebnyak, A. D.

AU - Boyarko, E. Yu

AU - Kryuchkov, Yu Yu

AU - Vorobev, S. A.

PY - 1984/1

Y1 - 1984/1

N2 - Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.

AB - Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.

UR - http://www.scopus.com/inward/record.url?scp=0021230627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021230627&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021230627

VL - 81

SP - 217

EP - 225

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -