Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.
|Number of pages||9|
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - Jan 1984|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics