POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS.

A. D. Pogrebnyak, E. Yu Boyarko, Yu Yu Kryuchkov, S. A. Vorobev

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Positron annihilation, backscattering of channeled ions, and electrical measurements were used to study the dependence of positron annihilation parameters and minority carrier lifetimes on the intensity and dose of the irradiation. Profiles of radiation damage in GaAs crystals are obtained.

Original languageEnglish
Pages (from-to)217-225
Number of pages9
JournalPhysica Status Solidi (A) Applied Research
Volume81
Issue number1
Publication statusPublished - Jan 1984

Fingerprint

Positron annihilation
Proton beams
Radiation damage
positron annihilation
proton beams
radiation damage
Electron beams
electron beams
Crystals
Carrier lifetime
Backscattering
carrier lifetime
profiles
minority carriers
electrical measurement
Dosimetry
crystals
backscattering
Irradiation
Ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

POSITRON ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GaAs AND Si CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON BEAMS. / Pogrebnyak, A. D.; Boyarko, E. Yu; Kryuchkov, Yu Yu; Vorobev, S. A.

In: Physica Status Solidi (A) Applied Research, Vol. 81, No. 1, 01.1984, p. 217-225.

Research output: Contribution to journalArticle

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