Abstract
In GaAs nanowires grown along the cubic [111]c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18-25nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.
| Original language | English |
|---|---|
| Pages (from-to) | 67-75 |
| Number of pages | 9 |
| Journal | Journal of Synchrotron Radiation |
| Volume | 22 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 2015 |
| Externally published | Yes |
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Keywords
- GaAs
- nanofocus
- nanowires
- polytypism
- X-ray diffraction
ASJC Scopus subject areas
- Radiation
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Polytypism in GaAs nanowires : Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction. / Köhl, Martin; Schroth, Philipp; Minkevich, Andrey A.; Hornung, Jean Wolfgang; Dimakis, Emmanouil; Somaschini, Claudio; Geelhaar, Lutz; Aschenbrenner, Timo; Lazarev, Sergey; Grigoriev, Daniil; Pietsch, Ullrich; Baumbach, Tilo.
In: Journal of Synchrotron Radiation, Vol. 22, No. 1, 01.01.2015, p. 67-75.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polytypism in GaAs nanowires
T2 - Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction
AU - Köhl, Martin
AU - Schroth, Philipp
AU - Minkevich, Andrey A.
AU - Hornung, Jean Wolfgang
AU - Dimakis, Emmanouil
AU - Somaschini, Claudio
AU - Geelhaar, Lutz
AU - Aschenbrenner, Timo
AU - Lazarev, Sergey
AU - Grigoriev, Daniil
AU - Pietsch, Ullrich
AU - Baumbach, Tilo
PY - 2015/1/1
Y1 - 2015/1/1
N2 - In GaAs nanowires grown along the cubic [111]c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18-25nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.
AB - In GaAs nanowires grown along the cubic [111]c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18-25nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.
KW - GaAs
KW - nanofocus
KW - nanowires
KW - polytypism
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=84920024042&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84920024042&partnerID=8YFLogxK
U2 - 10.1107/S1600577514023480
DO - 10.1107/S1600577514023480
M3 - Article
VL - 22
SP - 67
EP - 75
JO - Journal of Synchrotron Radiation
JF - Journal of Synchrotron Radiation
SN - 0909-0495
IS - 1
ER -