Polytypism in GaAs nanowires

Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

Martin Köhl, Philipp Schroth, Andrey A. Minkevich, Jean Wolfgang Hornung, Emmanouil Dimakis, Claudio Somaschini, Lutz Geelhaar, Timo Aschenbrenner, Sergey Lazarev, Daniil Grigoriev, Ullrich Pietsch, Tilo Baumbach

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In GaAs nanowires grown along the cubic [111]c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18-25nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.

Original languageEnglish
Pages (from-to)67-75
Number of pages9
JournalJournal of Synchrotron Radiation
Volume22
Issue number1
DOIs
Publication statusPublished - 1 Jan 2015
Externally publishedYes

Fingerprint

wurtzite
Nanowires
nanowires
spacing
X ray diffraction
Zinc
zinc
diffraction
x rays
Nucleation
nucleation
Scattering
scattering

Keywords

  • GaAs
  • nanofocus
  • nanowires
  • polytypism
  • X-ray diffraction

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Köhl, M., Schroth, P., Minkevich, A. A., Hornung, J. W., Dimakis, E., Somaschini, C., ... Baumbach, T. (2015). Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction. Journal of Synchrotron Radiation, 22(1), 67-75. https://doi.org/10.1107/S1600577514023480

Polytypism in GaAs nanowires : Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction. / Köhl, Martin; Schroth, Philipp; Minkevich, Andrey A.; Hornung, Jean Wolfgang; Dimakis, Emmanouil; Somaschini, Claudio; Geelhaar, Lutz; Aschenbrenner, Timo; Lazarev, Sergey; Grigoriev, Daniil; Pietsch, Ullrich; Baumbach, Tilo.

In: Journal of Synchrotron Radiation, Vol. 22, No. 1, 01.01.2015, p. 67-75.

Research output: Contribution to journalArticle

Köhl, M, Schroth, P, Minkevich, AA, Hornung, JW, Dimakis, E, Somaschini, C, Geelhaar, L, Aschenbrenner, T, Lazarev, S, Grigoriev, D, Pietsch, U & Baumbach, T 2015, 'Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction', Journal of Synchrotron Radiation, vol. 22, no. 1, pp. 67-75. https://doi.org/10.1107/S1600577514023480
Köhl, Martin ; Schroth, Philipp ; Minkevich, Andrey A. ; Hornung, Jean Wolfgang ; Dimakis, Emmanouil ; Somaschini, Claudio ; Geelhaar, Lutz ; Aschenbrenner, Timo ; Lazarev, Sergey ; Grigoriev, Daniil ; Pietsch, Ullrich ; Baumbach, Tilo. / Polytypism in GaAs nanowires : Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction. In: Journal of Synchrotron Radiation. 2015 ; Vol. 22, No. 1. pp. 67-75.
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