Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

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Abstract

New experimental data on planar channeling of 255 MeV electrons in a 0.74 μm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

Original languageEnglish
Article number012036
JournalJournal of Physics: Conference Series
Volume732
Issue number1
DOIs
Publication statusPublished - 3 Aug 2016

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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