Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Research output: Contribution to journalArticle

Abstract

New experimental data on planar channeling of 255 MeV electrons in a 0.74 μm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

Original languageEnglish
Article number012036
JournalJournal of Physics: Conference Series
Volume732
Issue number1
DOIs
Publication statusPublished - 3 Aug 2016

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silicon
radiation
crystals
electron trajectories
electrons
angular distribution
penetration
computerized simulation
trajectories

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation. / Takabayashi, Y.; Bagrov, V. G.; Bogdanov, O. V.; Pivovarov, Yu L.; Tukhfatullin, T. A.

In: Journal of Physics: Conference Series, Vol. 732, No. 1, 012036, 03.08.2016.

Research output: Contribution to journalArticle

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