Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Abstract

New experimental data on planar channeling of 255 MeV electrons in a 0.74 μm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

Original language	English
Article number	012036
Journal	Journal of Physics: Conference Series
Volume	732
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/732/1/012036
Publication status	Published - 3 Aug 2016

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1088/1742-6596/732/1/012036

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Activities

1 Participation in conference

International Symposium «Radiation from Relativistic Electrons in Periodic Structures»

Oleg Victorovich Bogdanov (Participant), Anatoly Sergeevich Konkov (Participant), Dmitry Andreevich Shkitov (Participant), Gennagy Andreevich Naumenko (Participant), Artem Igorevich Novokshonov (Participant), Sergey Vladimirovich Abdrashitov (Participant), Leonid Grigorievich Sukhikh (Participant), Vitold Vladislavovich Bleko (Participant), Dan Alexandrovich Verigin (Participant), Veronika Vyacheslavovna Soboleva (Participant), Anton Anatolievich Babaev (Participant), Alexander Petrovich Potylitsyn (Member of programme committee) & Sergey Romanovich Uglov (Participant)

6 Sep 2015 → 11 Sep 2015

Activity: Participating in or organising an event types › Participation in conference

Cite this

Takabayashi, Y., Bagrov, V. G., Bogdanov, O. V., Pivovarov, Y. L., & Tukhfatullin, T. A. (2016). Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation. Journal of Physics: Conference Series, 732(1), [012036]. https://doi.org/10.1088/1742-6596/732/1/012036

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