The influence of ion-heat modification on structural and phase variations of heat-resistant inorganic dielectrics has been studied. Pronounced phase transformations are shown to occur in the irradiated surface layer under postimplantation annealing. Their evolution is followed. The optimum conditions of modification realizing transition from dielectric to semiconducting state are determined for oxide and nitride compounds. Electrophysical properties of modified surface of dielectrics are studied.
|Number of pages||13|
|Journal||Surface Investigation X-Ray, Synchrotron and Neutron Techniques|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Surfaces and Interfaces