Abstract
To investigate physicochemical processes of SiO2 formation from film-forming solutions, the properties of these solutions, the processes taking place in a thin layer of such solutions at 298 and 333 K, and thermooxidation destruction at high temperature are studied.
Original language | English |
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Pages (from-to) | 198-201 |
Number of pages | 4 |
Journal | Russian Journal of Applied Chemistry |
Volume | 69 |
Issue number | 2 |
Publication status | Published - Feb 1996 |
ASJC Scopus subject areas
- Chemistry (miscellaneous)