To investigate physicochemical processes of SiO2 formation from film-forming solutions, the properties of these solutions, the processes taking place in a thin layer of such solutions at 298 and 333 K, and thermooxidation destruction at high temperature are studied.
|Number of pages||4|
|Journal||Russian Journal of Applied Chemistry|
|Publication status||Published - Feb 1996|
ASJC Scopus subject areas
- Chemistry (miscellaneous)