Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si

Abstract

The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi₂ were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si₃N₄ content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si₃N₄.

Original language	English
Pages (from-to)	646-649
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1710499
Publication status	Published - 1 May 2004

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1710499

Fingerprint Dive into the research topics of 'Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si'. Together they form a unique fingerprint.

Cite this

@article{e329de30dbc246c3b60c305cb5f541a2,

title = "Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si",

abstract = "The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.",

author = "H. Zeman and J. Musil and P. Zeman",

year = "2004",

month = may,

day = "1",

doi = "10.1116/1.1710499",

language = "English",

volume = "22",

pages = "646--649",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si

AU - Zeman, H.

AU - Musil, J.

AU - Zeman, P.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.

AB - The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.

UR - http://www.scopus.com/inward/record.url?scp=3142518027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142518027&partnerID=8YFLogxK

U2 - 10.1116/1.1710499

DO - 10.1116/1.1710499

M3 - Article

AN - SCOPUS:3142518027

VL - 22

SP - 646

EP - 649

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -