Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si

Abstract

The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi₂ were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si₃N₄ content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si₃N₄.

Original language	English
Pages (from-to)	646-649
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1710499
Publication status	Published - 1 May 2004

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1710499

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Zeman, H., Musil, J., & Zeman, P. (2004). Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22(3), 646-649. https://doi.org/10.1116/1.1710499

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abstract = "The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.",

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