Abstract
The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.
| Original language | English |
|---|---|
| Pages (from-to) | 646-649 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 22 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 May 2004 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si. / Zeman, H.; Musil, J.; Zeman, P.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 3, 01.05.2004, p. 646-649.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Physical and mechanical properties of sputtered Ta-Si-N films with a high (≥40 at%) content of Si
AU - Zeman, H.
AU - Musil, J.
AU - Zeman, P.
PY - 2004/5/1
Y1 - 2004/5/1
N2 - The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.
AB - The ternary Ta-Si-N films produced by magnetron sputtering using an alloyed TaSi2 were discussed. The effect of partial pressure of nitrogen on mechanical properties of the films was analyzed under specific conditions. It was stated that the films exhibited an X-ray amorphous structure, with increasing electric resistivity with increasing Si3N4 content. It was observed that the films achieved a high value of harness which was considerably higher than that of bulk Si3N4.
UR - http://www.scopus.com/inward/record.url?scp=3142518027&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142518027&partnerID=8YFLogxK
U2 - 10.1116/1.1710499
DO - 10.1116/1.1710499
M3 - Article
VL - 22
SP - 646
EP - 649
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 3
ER -