Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions

V. Kaladzhyan, P. P. Aseev, S. N. Artemenko

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We study theoretically the 2D HgTe/CdTe quantum well topological insulator illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent. If the edge state is tunnel-coupled to a conductor, then the photocurrent can be detected by measuring an electromotive force in the conductor, which is proportional to the photocurrent.

Original languageEnglish
Article number155424
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number15
DOIs
Publication statusPublished - 20 Oct 2015

Fingerprint

Optical transitions
Photocurrents
optical transition
photocurrents
insulators
conductors
Electromotive force
electromotive forces
Light polarization
Fermi level
Conduction bands
polarized light
electric dipoles
Semiconductor quantum wells
tunnels
Tunnels
conduction bands
asymmetry
quantum wells
occurrences

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Photogalvanic effect in the HgTe/CdTe topological insulator due to edge-bulk optical transitions. / Kaladzhyan, V.; Aseev, P. P.; Artemenko, S. N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 15, 155424, 20.10.2015.

Research output: Contribution to journalArticle

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