Photoelectron emission from semiconductors with low valence band dispersion

V. V. Konev, V. A. Chaldyshev

    Research output: Contribution to journalArticle

    Abstract

    In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

    Original languageEnglish
    Pages (from-to)351-354
    Number of pages4
    JournalSoviet Physics Journal
    Volume25
    Issue number4
    DOIs
    Publication statusPublished - Apr 1982

    Fingerprint

    Quantum yield
    Photoelectrons
    Valence bands
    photoelectrons
    Semiconductor materials
    valence
    Electron scattering
    electron scattering
    Scattering
    scattering

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Engineering(all)

    Cite this

    Photoelectron emission from semiconductors with low valence band dispersion. / Konev, V. V.; Chaldyshev, V. A.

    In: Soviet Physics Journal, Vol. 25, No. 4, 04.1982, p. 351-354.

    Research output: Contribution to journalArticle

    Konev, V. V. ; Chaldyshev, V. A. / Photoelectron emission from semiconductors with low valence band dispersion. In: Soviet Physics Journal. 1982 ; Vol. 25, No. 4. pp. 351-354.
    @article{88e0d43d763742f18ff4cc6e7d6454e3,
    title = "Photoelectron emission from semiconductors with low valence band dispersion",
    abstract = "In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.",
    author = "Konev, {V. V.} and Chaldyshev, {V. A.}",
    year = "1982",
    month = "4",
    doi = "10.1007/BF00906210",
    language = "English",
    volume = "25",
    pages = "351--354",
    journal = "Russian Physics Journal",
    issn = "1064-8887",
    publisher = "Consultants Bureau",
    number = "4",

    }

    TY - JOUR

    T1 - Photoelectron emission from semiconductors with low valence band dispersion

    AU - Konev, V. V.

    AU - Chaldyshev, V. A.

    PY - 1982/4

    Y1 - 1982/4

    N2 - In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

    AB - In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

    UR - http://www.scopus.com/inward/record.url?scp=0020113986&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0020113986&partnerID=8YFLogxK

    U2 - 10.1007/BF00906210

    DO - 10.1007/BF00906210

    M3 - Article

    VL - 25

    SP - 351

    EP - 354

    JO - Russian Physics Journal

    JF - Russian Physics Journal

    SN - 1064-8887

    IS - 4

    ER -