Photoelectron emission from semiconductors with low valence band dispersion

V. V. Konev, V. A. Chaldyshev

    Research output: Contribution to journal › Article

    Abstract

    In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

    Original languageEnglish
    Pages (from-to)351-354
    Number of pages4
    JournalSoviet Physics Journal
    Volume25
    Issue number4
    DOIs
    Publication statusPublished - Apr 1982

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    Quantum yield
    Photoelectrons
    Valence bands
    photoelectrons
    Semiconductor materials
    valence
    Electron scattering
    electron scattering
    Scattering
    scattering

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Engineering(all)

    Cite this

    Photoelectron emission from semiconductors with low valence band dispersion. / Konev, V. V.; Chaldyshev, V. A.

    In: Soviet Physics Journal, Vol. 25, No. 4, 04.1982, p. 351-354.

    Research output: Contribution to journal › Article

    Konev, VV & Chaldyshev, VA 1982, 'Photoelectron emission from semiconductors with low valence band dispersion', Soviet Physics Journal, vol. 25, no. 4, pp. 351-354. https://doi.org/10.1007/BF00906210
    Konev VV, Chaldyshev VA. Photoelectron emission from semiconductors with low valence band dispersion. Soviet Physics Journal. 1982 Apr;25(4):351-354. https://doi.org/10.1007/BF00906210
    Konev, V. V. ; Chaldyshev, V. A. / Photoelectron emission from semiconductors with low valence band dispersion. In: Soviet Physics Journal. 1982 ; Vol. 25, No. 4. pp. 351-354.
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