Photoelectron emission from semiconductors with low valence band dispersion

Abstract

In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Soviet Physics Journal
Volume	25
Issue number	4
DOIs	https://doi.org/10.1007/BF00906210
Publication status	Published - Apr 1982

ASJC Scopus subject areas

Physics and Astronomy(all)
Engineering(all)

Access to Document

10.1007/BF00906210

Fingerprint Dive into the research topics of 'Photoelectron emission from semiconductors with low valence band dispersion'. Together they form a unique fingerprint.

Cite this

@article{88e0d43d763742f18ff4cc6e7d6454e3,

title = "Photoelectron emission from semiconductors with low valence band dispersion",

abstract = "In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.",

author = "Konev, {V. V.} and Chaldyshev, {V. A.}",

year = "1982",

month = apr,

doi = "10.1007/BF00906210",

language = "English",

volume = "25",

pages = "351--354",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

number = "4",

}

TY - JOUR

T1 - Photoelectron emission from semiconductors with low valence band dispersion

AU - Konev, V. V.

AU - Chaldyshev, V. A.

PY - 1982/4

Y1 - 1982/4

N2 - In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

AB - In application to the group of compounds under consideration, a simple analytical expression is obtained for the quantum yield. Electron scattering processes of both elastic and inelastic nature are taken into account. The influence of such scattering processes on the structure of the spectral dependence of the quantum yield is discussed. It is shown that they can be responsible for the appearance of a number of features in this spectral dependence.

UR - http://www.scopus.com/inward/record.url?scp=0020113986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020113986&partnerID=8YFLogxK

U2 - 10.1007/BF00906210

DO - 10.1007/BF00906210

M3 - Article

AN - SCOPUS:0020113986

VL - 25

SP - 351

EP - 354

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 4

ER -

Photoelectron emission from semiconductors with low valence band dispersion

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this