Abstract
The influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account.
| Original language | English |
|---|---|
| Article number | 154302 |
| Journal | Journal of Applied Physics |
| Volume | 120 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 21 Oct 2016 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects. / Grinyaev, S. N.; Razzhuvalov, A. N.
In: Journal of Applied Physics, Vol. 120, No. 15, 154302, 21.10.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects
AU - Grinyaev, S. N.
AU - Razzhuvalov, A. N.
PY - 2016/10/21
Y1 - 2016/10/21
N2 - The influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account.
AB - The influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account.
UR - http://www.scopus.com/inward/record.url?scp=84992323192&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84992323192&partnerID=8YFLogxK
U2 - 10.1063/1.4964876
DO - 10.1063/1.4964876
M3 - Article
AN - SCOPUS:84992323192
VL - 120
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 15
M1 - 154302
ER -