Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects

S. N. Grinyaev, A. N. Razzhuvalov

Research output: Contribution to journalArticle

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Abstract

The influence of deep-level defects localized in spacer layers on the tunneling current in a w-AlN/GaN (0001) double-barrier structure is studied. It is shown that the current value essentially depends on the nature and spatial distribution of defects. New effects (screening of built-in fields, negative feedback, fixing of current peaks at high temperature) and a new mechanism of formation of resonances and tunneling current hysteresis caused by deep centers are established. The results of calculation agree with a number of experimental data on the position and temperature dependence of the current peak. It is noted that the current bistability can be caused by multicharged deep centers localized near the heteroboundaries of a double-barrier structure. Due to the defects, electric field in the barriers can reach values, at which the Poole-Frenkel effect should be taken into account.

Original languageEnglish
Article number154302
JournalJournal of Applied Physics
Volume120
Issue number15
DOIs
Publication statusPublished - 21 Oct 2016

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defects
negative feedback
fixing
spacers
spatial distribution
screening
hysteresis
temperature dependence
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects. / Grinyaev, S. N.; Razzhuvalov, A. N.

In: Journal of Applied Physics, Vol. 120, No. 15, 154302, 21.10.2016.

Research output: Contribution to journalArticle

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