Peculiarities of angular distribution of electrons at Si <100> channeling

O. V. Bogdanov, Yu L. Pivovarov, Y. Takabayashi, T. A. Tukhfatullin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".

Original languageEnglish
Article number012030
JournalJournal of Physics: Conference Series
Volume357
Issue number1
DOIs
Publication statusPublished - 2012

Fingerprint

spatial distribution
angular distribution
injectors
monitors
divergence
light sources
electrons
simulation
computerized simulation
trajectories
electron beams
silicon
scattering
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Peculiarities of angular distribution of electrons at Si <100> channeling. / Bogdanov, O. V.; Pivovarov, Yu L.; Takabayashi, Y.; Tukhfatullin, T. A.

In: Journal of Physics: Conference Series, Vol. 357, No. 1, 012030, 2012.

Research output: Contribution to journalArticle

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