Abstract
The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].
| Original language | English |
|---|---|
| Pages (from-to) | 6305-6308 |
| Number of pages | 4 |
| Journal | Physical Review E |
| Volume | 51 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Jan 1995 |
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ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Mathematical Physics
- Condensed Matter Physics
- Physics and Astronomy(all)
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Parametric x radiation from thick crystals. / Endo, I.; Harada, M.; Kobayashi, T.; Lee, Y. S.; Ohgaki, T.; Takahashi, T.; Muto, M.; Yoshida, K.; Nitta, H.; Potylitsin, A. P.; Zabaev, V. N.; Ohba, T.
In: Physical Review E, Vol. 51, No. 6, 01.01.1995, p. 6305-6308.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Parametric x radiation from thick crystals
AU - Endo, I.
AU - Harada, M.
AU - Kobayashi, T.
AU - Lee, Y. S.
AU - Ohgaki, T.
AU - Takahashi, T.
AU - Muto, M.
AU - Yoshida, K.
AU - Nitta, H.
AU - Potylitsin, A. P.
AU - Zabaev, V. N.
AU - Ohba, T.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].
AB - The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].
UR - http://www.scopus.com/inward/record.url?scp=0001535584&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001535584&partnerID=8YFLogxK
U2 - 10.1103/PhysRevE.51.6305
DO - 10.1103/PhysRevE.51.6305
M3 - Article
AN - SCOPUS:0001535584
VL - 51
SP - 6305
EP - 6308
JO - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
JF - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
SN - 1539-3755
IS - 6
ER -