Parametric x radiation from thick crystals

I. Endo, M. Harada, T. Kobayashi, Y. S. Lee, T. Ohgaki, T. Takahashi, M. Muto, K. Yoshida, H. Nitta, A. P. Potylitsin, V. N. Zabaev, T. Ohba

Research School of High-Energy Physics

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30 Citations (Scopus)

Abstract

The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].

Original language	English
Pages (from-to)	6305-6308
Number of pages	4
Journal	Physical Review E
Volume	51
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevE.51.6305
Publication status	Published - 1 Jan 1995

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ASJC Scopus subject areas

Statistical and Nonlinear Physics
Mathematical Physics
Condensed Matter Physics
Physics and Astronomy(all)

Cite this

Endo, I., Harada, M., Kobayashi, T., Lee, Y. S., Ohgaki, T., Takahashi, T., ... Ohba, T. (1995). Parametric x radiation from thick crystals. Physical Review E, 51(6), 6305-6308. https://doi.org/10.1103/PhysRevE.51.6305

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abstract = "The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].",

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T1 - Parametric x radiation from thick crystals

AU - Endo, I.

AU - Harada, M.

AU - Kobayashi, T.

AU - Lee, Y. S.

AU - Ohgaki, T.

AU - Takahashi, T.

AU - Muto, M.

AU - Yoshida, K.

AU - Nitta, H.

AU - Potylitsin, A. P.

AU - Zabaev, V. N.

AU - Ohba, T.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].

AB - The parametric x radiation from thick Si single crystals with 0.5-5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].

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Access to Document

10.1103/PhysRevE.51.6305