ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.

A. Ya Bobudaev, S. A. Vorob'ev, V. V. Kaplin, Valentina Victorovna Sokhoreva, Yu A. Timoshnikov, I. A. Tsekhanovskii

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

Original languageEnglish
Title of host publicationSov Phys Semicond
Volume7
Edition8
Publication statusPublished - Feb 1974

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bobudaev, A. Y., Vorob'ev, S. A., Kaplin, V. V., Sokhoreva, V. V., Timoshnikov, Y. A., & Tsekhanovskii, I. A. (1974). ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS. In Sov Phys Semicond (8 ed., Vol. 7)