ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.

A. Ya Bobudaev, S. A. Vorob'ev, V. V. Kaplin, Valentina Victorovna Sokhoreva, Yu A. Timoshnikov, I. A. Tsekhanovskii

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

Original language	English
Title of host publication	Sov Phys Semicond
Volume	7
Edition	8
Publication status	Published - Feb 1974

ASJC Scopus subject areas

Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.'. Together they form a unique fingerprint.

Cite this

Bobudaev, A. Y., Vorob'ev, S. A., Kaplin, V. V., Sokhoreva, V. V., Timoshnikov, Y. A., & Tsekhanovskii, I. A. (1974). ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS. In Sov Phys Semicond (8 ed., Vol. 7)

@inbook{1fa65a81934e450fb35e4b5e4a1f6337,

title = "ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.",

abstract = "The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.",

author = "Bobudaev, {A. Ya} and Vorob'ev, {S. A.} and Kaplin, {V. V.} and Sokhoreva, {Valentina Victorovna} and Timoshnikov, {Yu A.} and Tsekhanovskii, {I. A.}",

year = "1974",

month = feb,

language = "English",

volume = "7",

booktitle = "Sov Phys Semicond",

edition = "8",

}

TY - CHAP

T1 - ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.

AU - Bobudaev, A. Ya

AU - Vorob'ev, S. A.

AU - Kaplin, V. V.

AU - Sokhoreva, Valentina Victorovna

AU - Timoshnikov, Yu A.

AU - Tsekhanovskii, I. A.

PY - 1974/2

Y1 - 1974/2

N2 - The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

AB - The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

UR - http://www.scopus.com/inward/record.url?scp=0016028549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016028549&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0016028549

VL - 7

BT - Sov Phys Semicond

ER -