ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.

A. Ya Bobudaev, S. A. Vorob'ev, V. V. Kaplin, Valentina Victorovna Sokhoreva, Yu A. Timoshnikov, I. A. Tsekhanovskii

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Abstract

The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

Original language	English
Title of host publication	Sov Phys Semicond
Volume	7
Edition	8
Publication status	Published - Feb 1974

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Bobudaev, A. Y., Vorob'ev, S. A., Kaplin, V. V., Sokhoreva, V. V., Timoshnikov, Y. A., & Tsekhanovskii, I. A. (1974). ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS. In Sov Phys Semicond (8 ed., Vol. 7)

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abstract = "The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.",

author = "Bobudaev, {A. Ya} and Vorob'ev, {S. A.} and Kaplin, {V. V.} and Sokhoreva, {Valentina Victorovna} and Timoshnikov, {Yu A.} and Tsekhanovskii, {I. A.}",

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AU - Bobudaev, A. Ya

AU - Vorob'ev, S. A.

AU - Kaplin, V. V.

AU - Sokhoreva, Valentina Victorovna

AU - Timoshnikov, Yu A.

AU - Tsekhanovskii, I. A.

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N2 - The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

AB - The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.

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ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.

Abstract

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