Abstract
The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.
| Original language | English |
|---|---|
| Title of host publication | Sov Phys Semicond |
| Volume | 7 |
| Edition | 8 |
| Publication status | Published - Feb 1974 |
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ASJC Scopus subject areas
- Engineering(all)
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ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS. / Bobudaev, A. Ya; Vorob'ev, S. A.; Kaplin, V. V.; Sokhoreva, Valentina Victorovna; Timoshnikov, Yu A.; Tsekhanovskii, I. A.
Sov Phys Semicond. Vol. 7 8. ed. 1974.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - ORIENTED SCATTERING OF beta PARTICLES IN SILICON AND GALLIUM ARSENIDE SINGLE CRYSTALS.
AU - Bobudaev, A. Ya
AU - Vorob'ev, S. A.
AU - Kaplin, V. V.
AU - Sokhoreva, Valentina Victorovna
AU - Timoshnikov, Yu A.
AU - Tsekhanovskii, I. A.
PY - 1974/2
Y1 - 1974/2
N2 - The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.
AB - The dependence of the rate of counting of Na**2**2 positrons on the orientation of Si single crystals 17 and 31 mu thick was determined. The effect of orientation on the interaction of electrons with GaAs single crystals was studied by the backscattering method showing (SR-Y)**9**0 electron yield dependence on orientation. These dependences demonstrate the existence of the influence of orientation on the passage of collimated beams of beta particles across semiconductor single crystals.
UR - http://www.scopus.com/inward/record.url?scp=0016028549&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0016028549&partnerID=8YFLogxK
M3 - Chapter
VL - 7
BT - Sov Phys Semicond
ER -