Abstract
We have studied the action of ionizing radiation on defect-containing semiconductor crystals, metals, and alloys. Using modern methods for investigation of solids, Rutherford back scattering of channeled charged particles, x-ray diffraction, electron microscopy, and also calorimetric methods, we have established: a) irradiation (by x-ray beams, gamma rays, and electrons) of metals and alloys with an equivalent radiation dose less than 105 J/kg and of semiconductor crystals with a dose less than 103 J/kg does not lead to additional accumulation of defects but conversely leads to elimination of defects and transition of the crystal to a more equilibrium state; b) ionization processes play a determining role in rearrangment of defects in crystals exhibiting both semiconductor and metallic conductivity. We show that rearrangment of the crystal occurs as a result of stored energy in the crystal which is liberated due to chain reactions of annihilation of defects, initiated by ionization. Transition of the crystal to the equilibrium state is accompanied by improvement of its physical properties.
| Original language | English |
|---|---|
| Pages (from-to) | 1161-1168 |
| Number of pages | 8 |
| Journal | Russian Physics Journal |
| Volume | 37 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 1994 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Ordering of crystal structure by ionizing radiation. / Chernov, I. P.; Momontov, A. P.; Cherdantsev, P. A.; Chakhlov, B. V.
In: Russian Physics Journal, Vol. 37, No. 12, 12.1994, p. 1161-1168.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ordering of crystal structure by ionizing radiation
AU - Chernov, I. P.
AU - Momontov, A. P.
AU - Cherdantsev, P. A.
AU - Chakhlov, B. V.
PY - 1994/12
Y1 - 1994/12
N2 - We have studied the action of ionizing radiation on defect-containing semiconductor crystals, metals, and alloys. Using modern methods for investigation of solids, Rutherford back scattering of channeled charged particles, x-ray diffraction, electron microscopy, and also calorimetric methods, we have established: a) irradiation (by x-ray beams, gamma rays, and electrons) of metals and alloys with an equivalent radiation dose less than 105 J/kg and of semiconductor crystals with a dose less than 103 J/kg does not lead to additional accumulation of defects but conversely leads to elimination of defects and transition of the crystal to a more equilibrium state; b) ionization processes play a determining role in rearrangment of defects in crystals exhibiting both semiconductor and metallic conductivity. We show that rearrangment of the crystal occurs as a result of stored energy in the crystal which is liberated due to chain reactions of annihilation of defects, initiated by ionization. Transition of the crystal to the equilibrium state is accompanied by improvement of its physical properties.
AB - We have studied the action of ionizing radiation on defect-containing semiconductor crystals, metals, and alloys. Using modern methods for investigation of solids, Rutherford back scattering of channeled charged particles, x-ray diffraction, electron microscopy, and also calorimetric methods, we have established: a) irradiation (by x-ray beams, gamma rays, and electrons) of metals and alloys with an equivalent radiation dose less than 105 J/kg and of semiconductor crystals with a dose less than 103 J/kg does not lead to additional accumulation of defects but conversely leads to elimination of defects and transition of the crystal to a more equilibrium state; b) ionization processes play a determining role in rearrangment of defects in crystals exhibiting both semiconductor and metallic conductivity. We show that rearrangment of the crystal occurs as a result of stored energy in the crystal which is liberated due to chain reactions of annihilation of defects, initiated by ionization. Transition of the crystal to the equilibrium state is accompanied by improvement of its physical properties.
UR - http://www.scopus.com/inward/record.url?scp=34249763245&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34249763245&partnerID=8YFLogxK
U2 - 10.1007/BF00569797
DO - 10.1007/BF00569797
M3 - Article
AN - SCOPUS:34249763245
VL - 37
SP - 1161
EP - 1168
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 12
ER -