Optimization of the driver of gan power transistors through measurement of their thermal behavior

Lionel Hoffmann, Cyrille Gautier, Stephane Lefebvre, Francois Costa

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

GaN field effect power transistors based on Si substrate show low on-state resistance and very small Cgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses evaluation during operation. Using this method, we evaluate in a single measurement the transistors temperature and losses versus a chosen dead time or versus frequency. At least, we conclude on good practices regarding the drive of these components.

Original languageEnglish
Article number6576880
Pages (from-to)2359-2366
Number of pages8
JournalIEEE Transactions on Power Electronics
Volume29
Issue number5
DOIs
Publication statusPublished - 1 May 2014
Externally publishedYes

Fingerprint

Transistors
Switching frequency
Capacitance
Substrates
Power transistors
Hot Temperature
Temperature
Power field effect transistors

Keywords

  • Calorimetry
  • driver circuits
  • power converter
  • power semiconductor devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Optimization of the driver of gan power transistors through measurement of their thermal behavior. / Hoffmann, Lionel; Gautier, Cyrille; Lefebvre, Stephane; Costa, Francois.

In: IEEE Transactions on Power Electronics, Vol. 29, No. 5, 6576880, 01.05.2014, p. 2359-2366.

Research output: Contribution to journalArticle

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