Optimal Doping of GaSe Crystals for Nonlinear Optics Applications

Yu M. Andreev, E. A. Vaitulevich, K. A. Kokh, G. V. Lanskii, Valery Fedorovich Losev, D. M. Lubenko, V. A. Svetlichnyi, A. N. Soldatov, A. V. Shaiduko

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4 Citations (Scopus)

Abstract

Centimeter-sized crystals of GaSe have been grown by a modified vertical Bridgman method from a melt with content 0.01, 0.05, 0.1, 0.2, 0.5, 1, and 2 at.% Al and 0.025, 0.1, 0.5, 1, and 2 at.% Er using heat field rotation. Their physical properties have been investigated and compared with the properties of doped crystals with content 0.1, 0.5, 1, 2, 3, 5, 7, and 10.2 mass% S, 0.01, 0.1, 0.5, 1, 2, 3, and 5 mass% In, and 0.01, 0.1, 0.5, 1, and 2 mass% Te, grown by the same method and by the conventional Bridgman method. Optimal levels of doping of GaSe crystals with Al and Er have been established here for the first time to be equal to 0.01-0.05 at.% Al and ~0.5 at.% Er, respectively, of the growth charge.

Original languageEnglish
Pages (from-to)1250-1257
Number of pages8
JournalRussian Physics Journal
Volume56
Issue number11
DOIs
Publication statusPublished - 1 Jan 2014

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Keywords

  • crystals of solid solutions
  • doping
  • GaSe
  • nonlinear crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Andreev, Y. M., Vaitulevich, E. A., Kokh, K. A., Lanskii, G. V., Losev, V. F., Lubenko, D. M., ... Shaiduko, A. V. (2014). Optimal Doping of GaSe Crystals for Nonlinear Optics Applications. Russian Physics Journal, 56(11), 1250-1257. https://doi.org/10.1007/s11182-014-0168-z