Optimal Doping of GaSe Crystals for Nonlinear Optics Applications

Yu M. Andreev, E. A. Vaitulevich, K. A. Kokh, G. V. Lanskii, Valery Fedorovich Losev, D. M. Lubenko, V. A. Svetlichnyi, A. N. Soldatov, A. V. Shaiduko

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Centimeter-sized crystals of GaSe have been grown by a modified vertical Bridgman method from a melt with content 0.01, 0.05, 0.1, 0.2, 0.5, 1, and 2 at.% Al and 0.025, 0.1, 0.5, 1, and 2 at.% Er using heat field rotation. Their physical properties have been investigated and compared with the properties of doped crystals with content 0.1, 0.5, 1, 2, 3, 5, 7, and 10.2 mass% S, 0.01, 0.1, 0.5, 1, 2, 3, and 5 mass% In, and 0.01, 0.1, 0.5, 1, and 2 mass% Te, grown by the same method and by the conventional Bridgman method. Optimal levels of doping of GaSe crystals with Al and Er have been established here for the first time to be equal to 0.01-0.05 at.% Al and ~0.5 at.% Er, respectively, of the growth charge.

Original languageEnglish
Pages (from-to)1250-1257
Number of pages8
JournalRussian Physics Journal
Volume56
Issue number11
DOIs
Publication statusPublished - 1 Jan 2014

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nonlinear optics
Bridgman method
crystals
doped crystals
physical properties
heat

Keywords

  • crystals of solid solutions
  • doping
  • GaSe
  • nonlinear crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Andreev, Y. M., Vaitulevich, E. A., Kokh, K. A., Lanskii, G. V., Losev, V. F., Lubenko, D. M., ... Shaiduko, A. V. (2014). Optimal Doping of GaSe Crystals for Nonlinear Optics Applications. Russian Physics Journal, 56(11), 1250-1257. https://doi.org/10.1007/s11182-014-0168-z

Optimal Doping of GaSe Crystals for Nonlinear Optics Applications. / Andreev, Yu M.; Vaitulevich, E. A.; Kokh, K. A.; Lanskii, G. V.; Losev, Valery Fedorovich; Lubenko, D. M.; Svetlichnyi, V. A.; Soldatov, A. N.; Shaiduko, A. V.

In: Russian Physics Journal, Vol. 56, No. 11, 01.01.2014, p. 1250-1257.

Research output: Contribution to journalArticle

Andreev, YM, Vaitulevich, EA, Kokh, KA, Lanskii, GV, Losev, VF, Lubenko, DM, Svetlichnyi, VA, Soldatov, AN & Shaiduko, AV 2014, 'Optimal Doping of GaSe Crystals for Nonlinear Optics Applications', Russian Physics Journal, vol. 56, no. 11, pp. 1250-1257. https://doi.org/10.1007/s11182-014-0168-z
Andreev, Yu M. ; Vaitulevich, E. A. ; Kokh, K. A. ; Lanskii, G. V. ; Losev, Valery Fedorovich ; Lubenko, D. M. ; Svetlichnyi, V. A. ; Soldatov, A. N. ; Shaiduko, A. V. / Optimal Doping of GaSe Crystals for Nonlinear Optics Applications. In: Russian Physics Journal. 2014 ; Vol. 56, No. 11. pp. 1250-1257.
@article{cb3dfb84ca2a4179b85a4cd4c95c8340,
title = "Optimal Doping of GaSe Crystals for Nonlinear Optics Applications",
abstract = "Centimeter-sized crystals of GaSe have been grown by a modified vertical Bridgman method from a melt with content 0.01, 0.05, 0.1, 0.2, 0.5, 1, and 2 at.{\%} Al and 0.025, 0.1, 0.5, 1, and 2 at.{\%} Er using heat field rotation. Their physical properties have been investigated and compared with the properties of doped crystals with content 0.1, 0.5, 1, 2, 3, 5, 7, and 10.2 mass{\%} S, 0.01, 0.1, 0.5, 1, 2, 3, and 5 mass{\%} In, and 0.01, 0.1, 0.5, 1, and 2 mass{\%} Te, grown by the same method and by the conventional Bridgman method. Optimal levels of doping of GaSe crystals with Al and Er have been established here for the first time to be equal to 0.01-0.05 at.{\%} Al and ~0.5 at.{\%} Er, respectively, of the growth charge.",
keywords = "crystals of solid solutions, doping, GaSe, nonlinear crystals",
author = "Andreev, {Yu M.} and Vaitulevich, {E. A.} and Kokh, {K. A.} and Lanskii, {G. V.} and Losev, {Valery Fedorovich} and Lubenko, {D. M.} and Svetlichnyi, {V. A.} and Soldatov, {A. N.} and Shaiduko, {A. V.}",
year = "2014",
month = "1",
day = "1",
doi = "10.1007/s11182-014-0168-z",
language = "English",
volume = "56",
pages = "1250--1257",
journal = "Russian Physics Journal",
issn = "1064-8887",
publisher = "Consultants Bureau",
number = "11",

}

TY - JOUR

T1 - Optimal Doping of GaSe Crystals for Nonlinear Optics Applications

AU - Andreev, Yu M.

AU - Vaitulevich, E. A.

AU - Kokh, K. A.

AU - Lanskii, G. V.

AU - Losev, Valery Fedorovich

AU - Lubenko, D. M.

AU - Svetlichnyi, V. A.

AU - Soldatov, A. N.

AU - Shaiduko, A. V.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Centimeter-sized crystals of GaSe have been grown by a modified vertical Bridgman method from a melt with content 0.01, 0.05, 0.1, 0.2, 0.5, 1, and 2 at.% Al and 0.025, 0.1, 0.5, 1, and 2 at.% Er using heat field rotation. Their physical properties have been investigated and compared with the properties of doped crystals with content 0.1, 0.5, 1, 2, 3, 5, 7, and 10.2 mass% S, 0.01, 0.1, 0.5, 1, 2, 3, and 5 mass% In, and 0.01, 0.1, 0.5, 1, and 2 mass% Te, grown by the same method and by the conventional Bridgman method. Optimal levels of doping of GaSe crystals with Al and Er have been established here for the first time to be equal to 0.01-0.05 at.% Al and ~0.5 at.% Er, respectively, of the growth charge.

AB - Centimeter-sized crystals of GaSe have been grown by a modified vertical Bridgman method from a melt with content 0.01, 0.05, 0.1, 0.2, 0.5, 1, and 2 at.% Al and 0.025, 0.1, 0.5, 1, and 2 at.% Er using heat field rotation. Their physical properties have been investigated and compared with the properties of doped crystals with content 0.1, 0.5, 1, 2, 3, 5, 7, and 10.2 mass% S, 0.01, 0.1, 0.5, 1, 2, 3, and 5 mass% In, and 0.01, 0.1, 0.5, 1, and 2 mass% Te, grown by the same method and by the conventional Bridgman method. Optimal levels of doping of GaSe crystals with Al and Er have been established here for the first time to be equal to 0.01-0.05 at.% Al and ~0.5 at.% Er, respectively, of the growth charge.

KW - crystals of solid solutions

KW - doping

KW - GaSe

KW - nonlinear crystals

UR - http://www.scopus.com/inward/record.url?scp=84897404768&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897404768&partnerID=8YFLogxK

U2 - 10.1007/s11182-014-0168-z

DO - 10.1007/s11182-014-0168-z

M3 - Article

AN - SCOPUS:84897404768

VL - 56

SP - 1250

EP - 1257

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 11

ER -