Optimal Doping of GaSe Crystals for Nonlinear Optics Applications

Yu M. Andreev, E. A. Vaitulevich, K. A. Kokh, G. V. Lanskii, Valery Fedorovich Losev, D. M. Lubenko, V. A. Svetlichnyi, A. N. Soldatov, A. V. Shaiduko

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Centimeter-sized crystals of GaSe have been grown by a modified vertical Bridgman method from a melt with content 0.01, 0.05, 0.1, 0.2, 0.5, 1, and 2 at.% Al and 0.025, 0.1, 0.5, 1, and 2 at.% Er using heat field rotation. Their physical properties have been investigated and compared with the properties of doped crystals with content 0.1, 0.5, 1, 2, 3, 5, 7, and 10.2 mass% S, 0.01, 0.1, 0.5, 1, 2, 3, and 5 mass% In, and 0.01, 0.1, 0.5, 1, and 2 mass% Te, grown by the same method and by the conventional Bridgman method. Optimal levels of doping of GaSe crystals with Al and Er have been established here for the first time to be equal to 0.01-0.05 at.% Al and ~0.5 at.% Er, respectively, of the growth charge.

Original languageEnglish
Pages (from-to)1250-1257
Number of pages8
JournalRussian Physics Journal
Issue number11
Publication statusPublished - 1 Jan 2014


  • crystals of solid solutions
  • doping
  • GaSe
  • nonlinear crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Optimal Doping of GaSe Crystals for Nonlinear Optics Applications'. Together they form a unique fingerprint.

Cite this