Abstract
Optical reflectance and absorbance of gallium arsenide films formed on polycrystalline corundum, quartz glass, and copper foil are investigated in the energy interval of 1.1-6.2 eV. The films have been deposited from ablation plasma induced by a high-power ion beam. The exponential and interband absorbance spectra of the material of films are determined by defects in the GaAs crystalline lattice and the intricate composition of the material with predominance of nanocrystalline inclusions in the amorphous phase. Films deposited on polycor at the plasma flame center with the use of a low-resistance target have optimal properties for application in devices of optoelectronics and solar power engineering. Thermal vacuum treatment at 300-850 K modifies the optical properties of films owing to annealing of defects and changing of the structural-phase composition of a material.
| Original language | English |
|---|---|
| Pages (from-to) | 228-235 |
| Number of pages | 8 |
| Journal | Journal of Surface Investigation |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Apr 2011 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Optical properties of GaAs films deposited via pulsed ion ablation. / Kabyshev, A. V.; Konusov, F. V.; Remnev, G. E.
In: Journal of Surface Investigation, Vol. 5, No. 2, 01.04.2011, p. 228-235.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Optical properties of GaAs films deposited via pulsed ion ablation
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Remnev, G. E.
PY - 2011/4/1
Y1 - 2011/4/1
N2 - Optical reflectance and absorbance of gallium arsenide films formed on polycrystalline corundum, quartz glass, and copper foil are investigated in the energy interval of 1.1-6.2 eV. The films have been deposited from ablation plasma induced by a high-power ion beam. The exponential and interband absorbance spectra of the material of films are determined by defects in the GaAs crystalline lattice and the intricate composition of the material with predominance of nanocrystalline inclusions in the amorphous phase. Films deposited on polycor at the plasma flame center with the use of a low-resistance target have optimal properties for application in devices of optoelectronics and solar power engineering. Thermal vacuum treatment at 300-850 K modifies the optical properties of films owing to annealing of defects and changing of the structural-phase composition of a material.
AB - Optical reflectance and absorbance of gallium arsenide films formed on polycrystalline corundum, quartz glass, and copper foil are investigated in the energy interval of 1.1-6.2 eV. The films have been deposited from ablation plasma induced by a high-power ion beam. The exponential and interband absorbance spectra of the material of films are determined by defects in the GaAs crystalline lattice and the intricate composition of the material with predominance of nanocrystalline inclusions in the amorphous phase. Films deposited on polycor at the plasma flame center with the use of a low-resistance target have optimal properties for application in devices of optoelectronics and solar power engineering. Thermal vacuum treatment at 300-850 K modifies the optical properties of films owing to annealing of defects and changing of the structural-phase composition of a material.
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U2 - 10.1134/S1027451011030116
DO - 10.1134/S1027451011030116
M3 - Article
VL - 5
SP - 228
EP - 235
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 2
ER -