Optical properties of GaAs films deposited via pulsed ion ablation

A. V. Kabyshev, F. V. Konusov, G. E. Remnev

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Optical reflectance and absorbance of gallium arsenide films formed on polycrystalline corundum, quartz glass, and copper foil are investigated in the energy interval of 1.1-6.2 eV. The films have been deposited from ablation plasma induced by a high-power ion beam. The exponential and interband absorbance spectra of the material of films are determined by defects in the GaAs crystalline lattice and the intricate composition of the material with predominance of nanocrystalline inclusions in the amorphous phase. Films deposited on polycor at the plasma flame center with the use of a low-resistance target have optimal properties for application in devices of optoelectronics and solar power engineering. Thermal vacuum treatment at 300-850 K modifies the optical properties of films owing to annealing of defects and changing of the structural-phase composition of a material.

Original languageEnglish
Pages (from-to)228-235
Number of pages8
JournalJournal of Surface Investigation
Volume5
Issue number2
DOIs
Publication statusPublished - 1 Apr 2011

Fingerprint

Ablation
Optical properties
Ions
Plasmas
Defects
Quartz
Corundum
Gallium arsenide
Aluminum Oxide
Phase composition
Crystal lattices
Optoelectronic devices
Solar energy
Metal foil
Ion beams
Copper
gallium arsenide
Vacuum
Annealing
Crystalline materials

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Optical properties of GaAs films deposited via pulsed ion ablation. / Kabyshev, A. V.; Konusov, F. V.; Remnev, G. E.

In: Journal of Surface Investigation, Vol. 5, No. 2, 01.04.2011, p. 228-235.

Research output: Contribution to journalArticle

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