OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs.

K. P. Aref'ev, V. N. Brudnyi, D. L. Budnitskii, S. A. Vorob'ev, A. A. Tsoi

Division for Mathematics and Computer Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.

Original language	English
Pages (from-to)	669-671
Number of pages	3
Journal	Soviet physics. Semiconductors
Volume	13
Issue number	6
Publication status	Published - Jun 1979

ASJC Scopus subject areas

Engineering(all)

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@article{b4633e0abc6348fd8639ffc8930ed92d,

title = "OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs.",

abstract = "The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.",

author = "Aref'ev, {K. P.} and Brudnyi, {V. N.} and Budnitskii, {D. L.} and Vorob'ev, {S. A.} and Tsoi, {A. A.}",

year = "1979",

month = jun,

language = "English",

volume = "13",

pages = "669--671",

journal = "Soviet physics. Semiconductors",

issn = "0038-5700",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs.

AU - Aref'ev, K. P.

AU - Brudnyi, V. N.

AU - Budnitskii, D. L.

AU - Vorob'ev, S. A.

AU - Tsoi, A. A.

PY - 1979/6

Y1 - 1979/6

N2 - The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.

AB - The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.

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M3 - Article

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VL - 13

SP - 669

EP - 671

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

SN - 0038-5700

IS - 6

ER -