OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs.

K. P. Aref'ev, V. N. Brudnyi, D. L. Budnitskii, S. A. Vorob'ev, A. A. Tsoi

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Abstract

The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.

Original languageEnglish
Pages (from-to)669-671
Number of pages3
JournalSoviet physics. Semiconductors
Volume13
Issue number6
Publication statusPublished - Jun 1979

ASJC Scopus subject areas

  • Engineering(all)

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    Aref'ev, K. P., Brudnyi, V. N., Budnitskii, D. L., Vorob'ev, S. A., & Tsoi, A. A. (1979). OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs. Soviet physics. Semiconductors, 13(6), 669-671.