OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs.

K. P. Aref'ev, V. N. Brudnyi, D. L. Budnitskii, S. A. Vorob'ev, A. A. Tsoi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The 2 gamma positron annihilation method was used to establish for the first time that deep-level defects in GaAs irradiated with 2 MeV electrons at T approximately equals 300 degree K were of the vacancy type. The dominant defect was the vacancy nu //G//a, responsible for the absorption band at 1. 0 eV. The sensitivity threshold was found for the 2 gamma method when applied to GaAs irradiated with an electron dose of approximately 7 multiplied by 10**1**6 cm** minus **2.

Original languageEnglish
Pages (from-to)669-671
Number of pages3
JournalSoviet physics. Semiconductors
Volume13
Issue number6
Publication statusPublished - Jun 1979

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Positron annihilation
Light absorption
Vacancies
Defects
Electrons
Absorption spectra

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Aref'ev, K. P., Brudnyi, V. N., Budnitskii, D. L., Vorob'ev, S. A., & Tsoi, A. A. (1979). OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs. Soviet physics. Semiconductors, 13(6), 669-671.

OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs. / Aref'ev, K. P.; Brudnyi, V. N.; Budnitskii, D. L.; Vorob'ev, S. A.; Tsoi, A. A.

In: Soviet physics. Semiconductors, Vol. 13, No. 6, 06.1979, p. 669-671.

Research output: Contribution to journalArticle

Aref'ev, KP, Brudnyi, VN, Budnitskii, DL, Vorob'ev, SA & Tsoi, AA 1979, 'OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs.', Soviet physics. Semiconductors, vol. 13, no. 6, pp. 669-671.
Aref'ev KP, Brudnyi VN, Budnitskii DL, Vorob'ev SA, Tsoi AA. OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs. Soviet physics. Semiconductors. 1979 Jun;13(6):669-671.
Aref'ev, K. P. ; Brudnyi, V. N. ; Budnitskii, D. L. ; Vorob'ev, S. A. ; Tsoi, A. A. / OPTICAL ABSORPTION AND POSITRON ANNIHILATION IN ELECTRON-IRRADIATED GaAs. In: Soviet physics. Semiconductors. 1979 ; Vol. 13, No. 6. pp. 669-671.
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