Abstract
A method of increasing the emissive part of the area of metal-dielectric-metal (MDM) cathodes by forming microscopic protuberances on one of the electrodes by the photolithographic technique is presented. The manufacturing technology for Al-SiO2-Al thin-film structure with microprotuberances of the size of ∼1 μm is described. A mechanism for increasing the emission current is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 346-347 |
| Number of pages | 2 |
| Journal | Journal of Communications Technology and Electronics |
| Volume | 42 |
| Issue number | 3 |
| Publication status | Published - 1997 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
On the "Area Effect" in Metal-Dielectric-Metal Cathodes. / Gyngazov, S. A.; Troyan, L. A.; Troyan, P. E.
In: Journal of Communications Technology and Electronics, Vol. 42, No. 3, 1997, p. 346-347.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - On the "Area Effect" in Metal-Dielectric-Metal Cathodes
AU - Gyngazov, S. A.
AU - Troyan, L. A.
AU - Troyan, P. E.
PY - 1997
Y1 - 1997
N2 - A method of increasing the emissive part of the area of metal-dielectric-metal (MDM) cathodes by forming microscopic protuberances on one of the electrodes by the photolithographic technique is presented. The manufacturing technology for Al-SiO2-Al thin-film structure with microprotuberances of the size of ∼1 μm is described. A mechanism for increasing the emission current is proposed.
AB - A method of increasing the emissive part of the area of metal-dielectric-metal (MDM) cathodes by forming microscopic protuberances on one of the electrodes by the photolithographic technique is presented. The manufacturing technology for Al-SiO2-Al thin-film structure with microprotuberances of the size of ∼1 μm is described. A mechanism for increasing the emission current is proposed.
UR - http://www.scopus.com/inward/record.url?scp=2742594986&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2742594986&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2742594986
VL - 42
SP - 346
EP - 347
JO - Journal of Communications Technology and Electronics
JF - Journal of Communications Technology and Electronics
SN - 1064-2269
IS - 3
ER -