A technique is suggested for increasing the emission-active region part of metal-dielectric-metal cathodes because of the creation of microscopic bulges on one electrode with the help of photolithography. The technology of fabrication of a thin-film Al-SiO2-Al structure with size ≈1 μm is described. A mechanism of emission current increase is proposed.
|Number of pages||2|
|Journal||Radiotekhnika i Elektronika|
|Publication status||Published - Mar 1997|
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering