On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix

Abstract

The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.

Original language	English
Pages (from-to)	174-180
Number of pages	7
Journal	Journal of Contemporary Physics
Volume	51
Issue number	2
DOIs	https://doi.org/10.3103/S1068337216020110
Publication status	Published - 1 Apr 2016
Externally published	Yes

Keywords

optical transition
oscillator strength
quantum dot

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3103/S1068337216020110

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@article{ea00f1f3e6924dac8541841ac89c5040,

title = "On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix",

abstract = "The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the {\textquoteleft}retraction{\textquoteright} of electronic states into the Ge QD core.",

keywords = "optical transition, oscillator strength, quantum dot",

author = "Mkrtchyan, {A. R.} and Alexanyan, {Al G.} and Aramyan, {K. S.} and Alexanyan, {A. A.}",

year = "2016",

month = apr,

day = "1",

doi = "10.3103/S1068337216020110",

language = "English",

volume = "51",

pages = "174--180",

journal = "Journal of Contemporary Physics",

issn = "1068-3372",

publisher = "Springer Science + Business Media",

number = "2",

}

TY - JOUR

T1 - On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix

AU - Mkrtchyan, A. R.

AU - Alexanyan, Al G.

AU - Aramyan, K. S.

AU - Alexanyan, A. A.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.

AB - The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.

KW - optical transition

KW - oscillator strength

KW - quantum dot

UR - http://www.scopus.com/inward/record.url?scp=84976292153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84976292153&partnerID=8YFLogxK

U2 - 10.3103/S1068337216020110

DO - 10.3103/S1068337216020110

M3 - Article

AN - SCOPUS:84976292153

VL - 51

SP - 174

EP - 180

JO - Journal of Contemporary Physics

JF - Journal of Contemporary Physics

SN - 1068-3372

IS - 2

ER -