On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix

A. R. Mkrtchyan, Al G. Alexanyan, K. S. Aramyan, A. A. Alexanyan

Research output: Contribution to journalArticle

Abstract

The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.

Original languageEnglish
Pages (from-to)174-180
Number of pages7
JournalJournal of Contemporary Physics
Volume51
Issue number2
DOIs
Publication statusPublished - 1 Apr 2016
Externally publishedYes

Keywords

  • optical transition
  • oscillator strength
  • quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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