On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix

A. R. Mkrtchyan, Al G. Alexanyan, K. S. Aramyan, A. A. Alexanyan

Research output: Contribution to journal › Article

Abstract

The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.

Original language	English
Pages (from-to)	174-180
Number of pages	7
Journal	Journal of Contemporary Physics
Volume	51
Issue number	2
DOIs	https://doi.org/10.3103/S1068337216020110
Publication status	Published - 1 Apr 2016
Externally published	Yes

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Keywords

optical transition
oscillator strength
quantum dot

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Mkrtchyan, A. R., Alexanyan, A. G., Aramyan, K. S., & Alexanyan, A. A. (2016). On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix. Journal of Contemporary Physics, 51(2), 174-180. https://doi.org/10.3103/S1068337216020110

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10.3103/S1068337216020110