Abstract
The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.
| Original language | English |
|---|---|
| Pages (from-to) | 174-180 |
| Number of pages | 7 |
| Journal | Journal of Contemporary Physics |
| Volume | 51 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Apr 2016 |
| Externally published | Yes |
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Keywords
- optical transition
- oscillator strength
- quantum dot
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix. / Mkrtchyan, A. R.; Alexanyan, Al G.; Aramyan, K. S.; Alexanyan, A. A.
In: Journal of Contemporary Physics, Vol. 51, No. 2, 01.04.2016, p. 174-180.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - On mechanism of the growth of the optical transitions strengths in Ge-quantum dots embedded in Si matrix
AU - Mkrtchyan, A. R.
AU - Alexanyan, Al G.
AU - Aramyan, K. S.
AU - Alexanyan, A. A.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.
AB - The Si/Ge heterostructure, the active area of which is composed of the Ge quantum dots (QD), is investigated theoretically. The high density of the Ge QDs array cannot be the dominant feature in the choice of an adequate model that can explain the experimentally observed increase in the intensity of luminescence. In the basis of such model the conditions are laid that increase the oscillator strength of exciton due to the ‘retraction’ of electronic states into the Ge QD core.
KW - optical transition
KW - oscillator strength
KW - quantum dot
UR - http://www.scopus.com/inward/record.url?scp=84976292153&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84976292153&partnerID=8YFLogxK
U2 - 10.3103/S1068337216020110
DO - 10.3103/S1068337216020110
M3 - Article
AN - SCOPUS:84976292153
VL - 51
SP - 174
EP - 180
JO - Journal of Contemporary Physics
JF - Journal of Contemporary Physics
SN - 1068-3372
IS - 2
ER -