OBSERVATION OF MOLECULAR QUANTUM STATES IN THE CHANNELING OF 5. 6 Mev ELECTRONS IN (111) PLANES OF A SILICON SINGLE CRYSTAL.

S. A. Vorob'ev, V. V. Kaplin, S. B. Nurmagambetov, V. I. Gridnev, E. I. Rozum, S. Pak, S. R. Uglov

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Abstract

A detailed experimental and theoretical investigation was made of the orientation dependences of the angular distributions of electrons with a total energy of 5. 6 Mev after transmission by a silicon crystal of thickness 2. 0 mu . Bound molecular states were observed for fast electrons undergoing planar channeling in the fields of (111) atomic planes. A relationship was established between the processes of electron channeling and diffraction in the lattice.

Original languageEnglish
Pages (from-to)1302-1305
Number of pages4
JournalSoviet Physics, Solid State (English translation of Fizika Tverdogo Tela)
Volume26
Issue number7
Publication statusPublished - Jul 1984

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Single crystals
Silicon
Electrons
Angular distribution
Diffraction
Crystals

ASJC Scopus subject areas

  • Engineering(all)

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OBSERVATION OF MOLECULAR QUANTUM STATES IN THE CHANNELING OF 5. 6 Mev ELECTRONS IN (111) PLANES OF A SILICON SINGLE CRYSTAL. / Vorob'ev, S. A.; Kaplin, V. V.; Nurmagambetov, S. B.; Gridnev, V. I.; Rozum, E. I.; Pak, S.; Uglov, S. R.

In: Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), Vol. 26, No. 7, 07.1984, p. 1302-1305.

Research output: Contribution to journalArticle

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