Abstract
Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.
Original language | English |
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Pages (from-to) | 312-319 |
Number of pages | 8 |
Journal | Russian Microelectronics |
Volume | 38 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Sep 2009 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry