Numerical modeling of temperature fields in the elements and units of electronic systems

The Butakov Research Center

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Abstract

Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.

Original language	English
Pages (from-to)	312-319
Number of pages	8
Journal	Russian Microelectronics
Volume	38
Issue number	5
DOIs	https://doi.org/10.1134/S1063739709050035
Publication status	Published - 1 Sep 2009

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Kuznetsov, G. V., & Sheremet, M. A. (2009). Numerical modeling of temperature fields in the elements and units of electronic systems. Russian Microelectronics, 38(5), 312-319. https://doi.org/10.1134/S1063739709050035

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Access to Document

10.1134/S1063739709050035