Abstract
Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 312-319 |
| Number of pages | 8 |
| Journal | Russian Microelectronics |
| Volume | 38 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1 Sep 2009 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Numerical modeling of temperature fields in the elements and units of electronic systems. / Kuznetsov, G. V.; Sheremet, M. A.
In: Russian Microelectronics, Vol. 38, No. 5, 01.09.2009, p. 312-319.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Numerical modeling of temperature fields in the elements and units of electronic systems
AU - Kuznetsov, G. V.
AU - Sheremet, M. A.
PY - 2009/9/1
Y1 - 2009/9/1
N2 - Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.
AB - Mathematical modeling of conjugate heat transfer in a typical element of electronic equipment with confining walls of finite thickness and a heat source (for example, a heat-emitting crystal in a constant-power transistor) is carried out. Typical velocity and temperature fields are obtained that characterize the basic principles of the process. The effects of the energy-source intensity, the transient factor, and the thermophysical characteristics of the confining walls on the formation of air-flow and heat-transfer modes are demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=72449197685&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=72449197685&partnerID=8YFLogxK
U2 - 10.1134/S1063739709050035
DO - 10.1134/S1063739709050035
M3 - Article
AN - SCOPUS:72449197685
VL - 38
SP - 312
EP - 319
JO - Russian Microelectronics
JF - Russian Microelectronics
SN - 1063-7397
IS - 5
ER -