Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor

Valery A. Varlachev, Evgeny G. Emets, Ivan I. Lebedev, Daniil E. Zolotykh

Research Nuclear Reactor Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.

Original language	English
Title of host publication	2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	182-187
Number of pages	6
ISBN (Electronic)	9781538670545
DOIs	https://doi.org/10.1109/APEIE.2018.8545252
Publication status	Published - 26 Nov 2018
Event	14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Novosibirsk, Russian Federation Duration: 2 Oct 2018 → 6 Oct 2018

Conference

Conference	14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018
Country	Russian Federation
City	Novosibirsk
Period	2.10.18 → 6.10.18

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Keywords

integral flux
neutrons
nuclear doping
reactor
single-crystal silicon

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Varlachev, V. A., Emets, E. G., Lebedev, I. I., & Zolotykh, D. E. (2018). Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. In 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings (pp. 182-187). [8545252] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEIE.2018.8545252

Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. / Varlachev, Valery A.; Emets, Evgeny G.; Lebedev, Ivan I.; Zolotykh, Daniil E.

2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 182-187 8545252.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Varlachev, VA, Emets, EG, Lebedev, II & Zolotykh, DE 2018, Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. in 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings., 8545252, Institute of Electrical and Electronics Engineers Inc., pp. 182-187, 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018, Novosibirsk, Russian Federation, 2.10.18. https://doi.org/10.1109/APEIE.2018.8545252

Varlachev VA, Emets EG, Lebedev II, Zolotykh DE. Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. In 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 182-187. 8545252 https://doi.org/10.1109/APEIE.2018.8545252

Varlachev, Valery A. ; Emets, Evgeny G. ; Lebedev, Ivan I. ; Zolotykh, Daniil E. / Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 182-187

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Access to Document

10.1109/APEIE.2018.8545252