Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor

Valery A. Varlachev, Evgeny G. Emets, Ivan I. Lebedev, Daniil E. Zolotykh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.

Original languageEnglish
Title of host publication2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages182-187
Number of pages6
ISBN (Electronic)9781538670545
DOIs
Publication statusPublished - 26 Nov 2018
Event14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Novosibirsk, Russian Federation
Duration: 2 Oct 20186 Oct 2018

Conference

Conference14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018
CountryRussian Federation
CityNovosibirsk
Period2.10.186.10.18

Fingerprint

nuclear reactors
ingots
Nuclear reactors
Ingots
Doping (additives)
Single crystals
Silicon
Neutrons
single crystals
silicon
neutrons
Irradiation
Monocrystalline silicon
irradiation
containers
smoothing
homogeneity
Containers
mathematical models
Mathematical models

Keywords

  • integral flux
  • neutrons
  • nuclear doping
  • reactor
  • single-crystal silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Varlachev, V. A., Emets, E. G., Lebedev, I. I., & Zolotykh, D. E. (2018). Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. In 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings (pp. 182-187). [8545252] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEIE.2018.8545252

Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. / Varlachev, Valery A.; Emets, Evgeny G.; Lebedev, Ivan I.; Zolotykh, Daniil E.

2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 182-187 8545252.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Varlachev, VA, Emets, EG, Lebedev, II & Zolotykh, DE 2018, Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. in 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings., 8545252, Institute of Electrical and Electronics Engineers Inc., pp. 182-187, 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018, Novosibirsk, Russian Federation, 2.10.18. https://doi.org/10.1109/APEIE.2018.8545252
Varlachev VA, Emets EG, Lebedev II, Zolotykh DE. Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. In 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 182-187. 8545252 https://doi.org/10.1109/APEIE.2018.8545252
Varlachev, Valery A. ; Emets, Evgeny G. ; Lebedev, Ivan I. ; Zolotykh, Daniil E. / Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor. 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 182-187
@inproceedings{ca72eaded6a3459eb16d62190e8a8c6b,
title = "Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor",
abstract = "In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.",
keywords = "integral flux, neutrons, nuclear doping, reactor, single-crystal silicon",
author = "Varlachev, {Valery A.} and Emets, {Evgeny G.} and Lebedev, {Ivan I.} and Zolotykh, {Daniil E.}",
year = "2018",
month = "11",
day = "26",
doi = "10.1109/APEIE.2018.8545252",
language = "English",
pages = "182--187",
booktitle = "2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor

AU - Varlachev, Valery A.

AU - Emets, Evgeny G.

AU - Lebedev, Ivan I.

AU - Zolotykh, Daniil E.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.

AB - In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.

KW - integral flux

KW - neutrons

KW - nuclear doping

KW - reactor

KW - single-crystal silicon

UR - http://www.scopus.com/inward/record.url?scp=85060165327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060165327&partnerID=8YFLogxK

U2 - 10.1109/APEIE.2018.8545252

DO - 10.1109/APEIE.2018.8545252

M3 - Conference contribution

SP - 182

EP - 187

BT - 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -