Abstract
In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.
Original language | English |
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Title of host publication | 2018 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 182-187 |
Number of pages | 6 |
ISBN (Electronic) | 9781538670545 |
DOIs | |
Publication status | Published - 26 Nov 2018 |
Event | 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 - Novosibirsk, Russian Federation Duration: 2 Oct 2018 → 6 Oct 2018 |
Conference
Conference | 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 |
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Country | Russian Federation |
City | Novosibirsk |
Period | 2.10.18 → 6.10.18 |
Keywords
- integral flux
- neutrons
- nuclear doping
- reactor
- single-crystal silicon
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Instrumentation
- Atomic and Molecular Physics, and Optics