Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode

N. P. Kondrat'eva, Yu D. Korolev, N. N. Koval', V. G. Rabotkin, P. M. Schanin, I. A. Shemyakin

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The phenomenon of current quenching in a plasma-filled diode forms the basis equation for operation of the plasma erosion opening switch. In typical operating conditions of the switch, a vacuum gap is preliminarily filled with a plasma from an external source after which a voltage is applied to the gap and an external electric circuit provides for a current rise with a characteristic time of the order of 1 μs. When the current reaches some critical value, the resistance of the gap sharply increases so that the current quenching and the corresponding voltage kick occurs, opening the gap for a short time.

    Original languageEnglish
    Title of host publicationInternational Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
    EditorsJ. Wetzer
    Place of PublicationPiscataway, NJ, United States
    PublisherIEEE
    Pages684-687
    Number of pages4
    Volume2
    Publication statusPublished - 1998
    EventProceedings of the 1998 18th Interantional Symposium on Discharges and Electrical Insulation in Vacuum. Part 1 (of 2) - Eindhoven, Neth
    Duration: 17 Aug 199821 Aug 1998

    Other

    OtherProceedings of the 1998 18th Interantional Symposium on Discharges and Electrical Insulation in Vacuum. Part 1 (of 2)
    CityEindhoven, Neth
    Period17.8.9821.8.98

    Fingerprint

    Quenching
    Diodes
    Plasmas
    Switches
    Electric potential
    Erosion
    Vacuum
    Networks (circuits)

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Kondrat'eva, N. P., Korolev, Y. D., Koval', N. N., Rabotkin, V. G., Schanin, P. M., & Shemyakin, I. A. (1998). Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode. In J. Wetzer (Ed.), International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (Vol. 2, pp. 684-687). Piscataway, NJ, United States: IEEE.

    Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode. / Kondrat'eva, N. P.; Korolev, Yu D.; Koval', N. N.; Rabotkin, V. G.; Schanin, P. M.; Shemyakin, I. A.

    International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. ed. / J. Wetzer. Vol. 2 Piscataway, NJ, United States : IEEE, 1998. p. 684-687.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kondrat'eva, NP, Korolev, YD, Koval', NN, Rabotkin, VG, Schanin, PM & Shemyakin, IA 1998, Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode. in J Wetzer (ed.), International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. vol. 2, IEEE, Piscataway, NJ, United States, pp. 684-687, Proceedings of the 1998 18th Interantional Symposium on Discharges and Electrical Insulation in Vacuum. Part 1 (of 2), Eindhoven, Neth, 17.8.98.
    Kondrat'eva NP, Korolev YD, Koval' NN, Rabotkin VG, Schanin PM, Shemyakin IA. Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode. In Wetzer J, editor, International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. Vol. 2. Piscataway, NJ, United States: IEEE. 1998. p. 684-687
    Kondrat'eva, N. P. ; Korolev, Yu D. ; Koval', N. N. ; Rabotkin, V. G. ; Schanin, P. M. ; Shemyakin, I. A. / Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode. International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. editor / J. Wetzer. Vol. 2 Piscataway, NJ, United States : IEEE, 1998. pp. 684-687
    @inproceedings{67232ffe3dc64cd4a5c325a68858152d,
    title = "Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode",
    abstract = "The phenomenon of current quenching in a plasma-filled diode forms the basis equation for operation of the plasma erosion opening switch. In typical operating conditions of the switch, a vacuum gap is preliminarily filled with a plasma from an external source after which a voltage is applied to the gap and an external electric circuit provides for a current rise with a characteristic time of the order of 1 μs. When the current reaches some critical value, the resistance of the gap sharply increases so that the current quenching and the corresponding voltage kick occurs, opening the gap for a short time.",
    author = "Kondrat'eva, {N. P.} and Korolev, {Yu D.} and Koval', {N. N.} and Rabotkin, {V. G.} and Schanin, {P. M.} and Shemyakin, {I. A.}",
    year = "1998",
    language = "English",
    volume = "2",
    pages = "684--687",
    editor = "J. Wetzer",
    booktitle = "International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV",
    publisher = "IEEE",

    }

    TY - GEN

    T1 - Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode

    AU - Kondrat'eva, N. P.

    AU - Korolev, Yu D.

    AU - Koval', N. N.

    AU - Rabotkin, V. G.

    AU - Schanin, P. M.

    AU - Shemyakin, I. A.

    PY - 1998

    Y1 - 1998

    N2 - The phenomenon of current quenching in a plasma-filled diode forms the basis equation for operation of the plasma erosion opening switch. In typical operating conditions of the switch, a vacuum gap is preliminarily filled with a plasma from an external source after which a voltage is applied to the gap and an external electric circuit provides for a current rise with a characteristic time of the order of 1 μs. When the current reaches some critical value, the resistance of the gap sharply increases so that the current quenching and the corresponding voltage kick occurs, opening the gap for a short time.

    AB - The phenomenon of current quenching in a plasma-filled diode forms the basis equation for operation of the plasma erosion opening switch. In typical operating conditions of the switch, a vacuum gap is preliminarily filled with a plasma from an external source after which a voltage is applied to the gap and an external electric circuit provides for a current rise with a characteristic time of the order of 1 μs. When the current reaches some critical value, the resistance of the gap sharply increases so that the current quenching and the corresponding voltage kick occurs, opening the gap for a short time.

    UR - http://www.scopus.com/inward/record.url?scp=0032291916&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0032291916&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0032291916

    VL - 2

    SP - 684

    EP - 687

    BT - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV

    A2 - Wetzer, J.

    PB - IEEE

    CY - Piscataway, NJ, United States

    ER -