Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode

N. P. Kondrat'eva, Yu D. Korolev, N. N. Koval', V. G. Rabotkin, P. M. Schanin, I. A. Shemyakin

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The phenomenon of current quenching in a plasma-filled diode forms the basis equation for operation of the plasma erosion opening switch. In typical operating conditions of the switch, a vacuum gap is preliminarily filled with a plasma from an external source after which a voltage is applied to the gap and an external electric circuit provides for a current rise with a characteristic time of the order of 1 μs. When the current reaches some critical value, the resistance of the gap sharply increases so that the current quenching and the corresponding voltage kick occurs, opening the gap for a short time.

    Original languageEnglish
    Title of host publicationInternational Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
    EditorsJ. Wetzer
    Place of PublicationPiscataway, NJ, United States
    PublisherIEEE
    Pages684-687
    Number of pages4
    Volume2
    Publication statusPublished - 1998
    EventProceedings of the 1998 18th Interantional Symposium on Discharges and Electrical Insulation in Vacuum. Part 1 (of 2) - Eindhoven, Neth
    Duration: 17 Aug 199821 Aug 1998

    Other

    OtherProceedings of the 1998 18th Interantional Symposium on Discharges and Electrical Insulation in Vacuum. Part 1 (of 2)
    CityEindhoven, Neth
    Period17.8.9821.8.98

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Kondrat'eva, N. P., Korolev, Y. D., Koval', N. N., Rabotkin, V. G., Schanin, P. M., & Shemyakin, I. A. (1998). Nonmonotonic potential distribution and current quenching mechanism in plasma-filled diode. In J. Wetzer (Ed.), International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (Vol. 2, pp. 684-687). IEEE.