An analysis is made of the published experimental and theoretical results demonstrating the possibility of nonequilibrium carrier generation in a semiconductor at the expense of energy provided by heterogeneous chemical reactions. A calculation is given of the spatial-temporal distribution of nonequilibrium electrons and holes in the field of adsorbed and initial surface charges: this distribution is governed by the field of such charges as well as by the recombination of nonequilibrium electrons and holes in the bulk and on the surface. The time dependence of the nonequilibrium carrier density in the case of generation of a ″clean″ or an adsorbate-covered surface is due to the surface adsorption processes in the former case and the establishment of a steady state in the electron subsystem in the latter case. The spatial-temporal distribution of chemically excited carriers found in this way is used as the basis of a calculation of nonequilibrium electron effects which occur when a semiconductor interacts with a reactive gas.
|Title of host publication||Sov Phys Semicond|
|Number of pages||4|
|Publication status||Published - Nov 1977|
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