Abstract
In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.
| Original language | English |
|---|---|
| Pages (from-to) | 166-171 |
| Number of pages | 6 |
| Journal | Diamond and Related Materials |
| Volume | 94 |
| DOIs | |
| Publication status | Published - 1 Apr 2019 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape. / Linnik, S. A.; Gaydaychuk, A. V.
In: Diamond and Related Materials, Vol. 94, 01.04.2019, p. 166-171.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape
AU - Linnik, S. A.
AU - Gaydaychuk, A. V.
PY - 2019/4/1
Y1 - 2019/4/1
N2 - In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.
AB - In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.
UR - http://www.scopus.com/inward/record.url?scp=85063198923&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85063198923&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2019.03.011
DO - 10.1016/j.diamond.2019.03.011
M3 - Article
AN - SCOPUS:85063198923
VL - 94
SP - 166
EP - 171
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -