New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape

Research output: Contribution to journalArticle

Abstract

In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.

Original languageEnglish
Pages (from-to)166-171
Number of pages6
JournalDiamond and Related Materials
Volume94
DOIs
Publication statusPublished - 1 Apr 2019

Fingerprint

Milling cutters
Diamond
Glow discharges
Chemical vapor deposition
Diamonds
Deposition rates
Plasmas
Coatings
Argon
Multilayers
Deposits
Geometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{376c352c16364916b92c85a898b44cab,
title = "New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape",
abstract = "In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80{\%} vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50{\%} from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.",
author = "Linnik, {S. A.} and Gaydaychuk, {A. V.}",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.diamond.2019.03.011",
language = "English",
volume = "94",
pages = "166--171",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - New set up for diamond coatings deposition in AC glow discharge plasma on WC-Co milling cutters of complex shape

AU - Linnik, S. A.

AU - Gaydaychuk, A. V.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.

AB - In the current work, we developed a new type of CVD reactor for high-speed deposition of uniform diamond coatings on WC-Co milling cutters in AC glow discharge plasma with two plasma channels in the Ar/H 2 /CH 4 atmosphere. This CVD system successfully allowed one to deposit well-adherent MCD, UNCD and Multilayer diamond coatings with a thickness up to 60 μm on WC-Co milling cutters of various geometries and with a diameter up to 14 mm. We found that to minimize the edge effect, the optimal energy input for each plasma cord should be set in the range of 1.4–2.5 kW. We also found that diluting the H 2 /CH 4 atmosphere with argon in the range of 45–80% vol. is one of the necessary conditions to control the deposition process. Diamond deposition rate has been achieved up to 2.5–3 μm/h with a uniformity of deposition over 50% from maximum thickness. Presented CVD system is very promising due to sufficiently high deposition rate and ease of implementation, and it also has great potential for industrial scaling.

UR - http://www.scopus.com/inward/record.url?scp=85063198923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063198923&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2019.03.011

DO - 10.1016/j.diamond.2019.03.011

M3 - Article

VL - 94

SP - 166

EP - 171

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -